18337001. Image sensor with stacked pixels including charge sharing gates simplified abstract (Apple Inc.)
Contents
- 1 Image sensor with stacked pixels including charge sharing gates
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Image sensor with stacked pixels including charge sharing gates - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Image sensor with stacked pixels including charge sharing gates
Organization Name
Inventor(s)
Vladimir Koifman of Rishon LeZion (IL)
Image sensor with stacked pixels including charge sharing gates - A simplified explanation of the abstract
This abstract first appeared for US patent application 18337001 titled 'Image sensor with stacked pixels including charge sharing gates
Simplified Explanation
The patent application describes an image sensor with a sensor die overlaid on a logic die, including detector elements with sensing circuits and pixel circuits for readout.
- The image sensor includes an array of detector elements with sensing circuits on the sensor die.
- Each detector element includes a photodiode, a floating diffusion node, a charge sharing transistor, a reset transistor, and a source follower transistor.
- A pixel circuit on the logic die includes a select transistor connected to the output of the source follower and one of the bitlines.
- Two current memory circuits are coupled to the select transistor to sense and output signals indicative of noise levels in the detector element.
Potential Applications
The technology could be applied in digital cameras, smartphones, security cameras, and medical imaging devices.
Problems Solved
The innovation helps improve image quality by reducing noise in detector elements, leading to clearer and more accurate images.
Benefits
The image sensor offers enhanced image quality, better low-light performance, and improved overall performance in various imaging applications.
Potential Commercial Applications
The technology could be utilized in consumer electronics, surveillance systems, medical imaging equipment, and industrial inspection devices.
Possible Prior Art
One possible prior art could be image sensors with similar pixel and readout circuit configurations, but without the specific noise reduction features described in this patent application.
Unanswered Questions
How does this technology compare to existing noise reduction techniques in image sensors?
The patent application does not provide a direct comparison to other noise reduction methods commonly used in image sensors. It would be interesting to know how this technology stacks up against traditional noise reduction approaches in terms of effectiveness and efficiency.
What impact could this innovation have on the cost of manufacturing image sensors?
The cost implications of implementing this technology in mass production are not addressed in the patent application. Understanding how this innovation may affect the overall cost of image sensor production could be crucial for assessing its feasibility and market adoption.
Original Abstract Submitted
An image sensor includes a logic die, including column readout circuits and bitlines connected to the column readout circuits. A sensor die is overlaid on the logic die. The image sensor includes an array of detector elements, each including a sensing circuit on the sensor die, which includes a photodiode, a floating diffusion node a charge sharing transistor coupled between the photodiode and the floating diffusion node, a reset transistor coupled to the floating diffusion node, and a source follower transistor. In each detector element, a pixel circuit on the logic die includes a select transistor, which has an input coupled to the output of the source follower and an output coupled to one of the bitlines. Two current memory circuits are coupled to the input of the select transistor and are configured to sense and output respective signals indicative of levels of noise in the detector element.