18323715. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wookhyun Kwon of Suwon-si (KR)
Heonjong Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18323715 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with an active pattern, a channel pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern consists of vertically stacked semiconductor patterns that are spaced apart, with the lowermost one being a first semiconductor pattern. The source/drain pattern is connected to the semiconductor patterns, while the gate electrode, which includes inner electrodes, is positioned on top of the semiconductor patterns except the first one. The insulation pattern, located between the first semiconductor pattern and the active pattern, comprises a dielectric pattern and a protection layer.
- The semiconductor device features vertically stacked semiconductor patterns in the channel pattern.
- The gate electrode includes inner electrodes positioned below the semiconductor patterns.
- The insulation pattern consists of a dielectric pattern and a protection layer.
- The protection layer is located between the dielectric pattern and the first semiconductor pattern.
- The device design aims to optimize the performance and efficiency of semiconductor components.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and functionality of integrated circuits in electronic devices.
Problems Solved: - Improves the integration and performance of semiconductor components. - Enhances the efficiency and reliability of electronic devices.
Benefits: - Increased performance and efficiency of semiconductor devices. - Enhanced functionality and reliability of integrated circuits. - Improved manufacturing processes for electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries requiring advanced semiconductor components for their products.
Questions about Semiconductor Device Technology: 1. How does the design of the semiconductor device contribute to its performance and efficiency? The design of the semiconductor device, with vertically stacked semiconductor patterns and optimized gate electrode placement, aims to enhance the overall performance and efficiency of the device by improving the integration and functionality of semiconductor components.
2. What potential applications can benefit from the use of this advanced semiconductor device technology? Various electronic applications, including smartphones, computers, and other consumer electronics, can benefit from the enhanced performance and efficiency offered by this advanced semiconductor device technology.
Original Abstract Submitted
A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. A lowermost one of the semiconductor patterns may be a first semiconductor pattern. The source/drain pattern may be connected to the semiconductor patterns. The gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. The insulation pattern may be between the first semiconductor pattern and the active pattern. The insulation pattern may include a dielectric pattern and a protection layer. The protection layer may be between the dielectric pattern and the first semiconductor pattern. The protection layer may be between the dielectric pattern and the active pattern.
