18243646. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kazuki Minamikawa of Nomi Ishikawa (JP)
Daiki Yoshikawa of Kanazawa Ishikawa (JP)
Kazutoshi Nakamura of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243646 titled 'SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a first electrode, first and second semiconductor regions of different conductivity types, a third semiconductor region with a higher impurity concentration, and a second electrode. The second electrode has two parts, with the first part in the second semiconductor region and the second part contacting the third semiconductor region.
- The semiconductor device includes multiple semiconductor regions with varying impurity concentrations.
- The second electrode is divided into two parts, allowing for precise contact with different semiconductor regions.
- The design of the device enables efficient electrical connections in multiple directions.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in power electronics, sensors, and other semiconductor-based systems.
Problems Solved: - Provides a solution for optimizing electrical connections in semiconductor devices with multiple regions of different conductivity types. - Enables more efficient and precise control of electrical currents in semiconductor components.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced functionality and versatility in electronic applications. - Potential for advancements in semiconductor technology.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electrical Connections This technology could be utilized in the development of high-performance electronic devices for industries such as telecommunications, automotive, and consumer electronics. The improved electrical connections can lead to more reliable and efficient electronic systems, enhancing overall product performance and user experience.
Questions about Semiconductor Device Technology: 1. How does the impurity concentration in the third semiconductor region affect the overall performance of the device? The higher impurity concentration in the third semiconductor region allows for better conductivity and more efficient electrical connections within the device.
2. What are the potential challenges in manufacturing semiconductor devices with multiple regions of different conductivity types? Manufacturing semiconductor devices with multiple regions of different conductivity types may require precise control over impurity concentrations and material properties to ensure optimal performance and reliability.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and a second electrode. The third semiconductor region is located on the second semiconductor region, and has a higher second-conductivity-type impurity concentration than the second semiconductor region. The second electrode is located on the third semiconductor region. The second electrode includes a first part and a second part. The first part is located in the second semiconductor region. The second part is positioned on the first part, and contacts the third semiconductor region in a second direction perpendicular to a first direction from the first electrode toward the first semiconductor region. A length of the first part is greater than a length of the second part in the second direction.
