18242844. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)

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SEMICONDUCTOR DEVICE

Organization Name

Kabushiki Kaisha Toshiba

Inventor(s)

Yoko Iwakaji of Meguro Tokyo (JP)

Tomoko Matsudai of Shibuya Tokyo (JP)

Ryohei Gejo of Kawasaki Kanagawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18242844 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of multiple layers and electrodes, including insulating films to separate them. The layers have different conductivity types and carrier concentrations, contributing to the device's functionality.

  • The device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type.
  • The first semiconductor layer is connected to the first electrode, while the second semiconductor layer contacts the first semiconductor layer.
  • The second electrode is connected to the second semiconductor layer, and the first insulating film is located between the third electrode and the semiconductor layers.
  • The third semiconductor layer has a higher carrier concentration than the first semiconductor layer, contributing to the device's performance.

Potential Applications: - This semiconductor device could be used in electronic devices such as transistors, diodes, or integrated circuits. - It may find applications in power electronics, telecommunications, or sensor technology.

Problems Solved: - The device addresses the need for efficient and reliable semiconductor components with controlled carrier concentrations. - It provides a solution for creating complex electronic circuits with improved performance.

Benefits: - Enhanced functionality and performance in electronic devices. - Better control over carrier concentrations for specific applications. - Potential for increased efficiency and reliability in semiconductor technology.

Commercial Applications: Title: Semiconductor Device with Controlled Carrier Concentrations This technology could be utilized in the manufacturing of various electronic devices, leading to improved performance and reliability. The market implications include advancements in the semiconductor industry and potential cost savings for manufacturers.

Questions about Semiconductor Devices with Controlled Carrier Concentrations: 1. How does the carrier concentration affect the performance of semiconductor devices?

  - The carrier concentration influences the conductivity and overall functionality of semiconductor devices. Higher carrier concentrations can lead to improved performance in certain applications.

2. What are the key differences between semiconductor layers of different conductivity types in this device?

  - The semiconductor layers of different conductivity types play distinct roles in the device's operation, contributing to its overall functionality and performance.


Original Abstract Submitted

A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type. The first semiconductor layer is connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer. The second electrode is connected to the second semiconductor layer. The first insulating film is located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer. The third semiconductor layer is located between the first insulating film and the first semiconductor layer. The third semiconductor layer contacts the first insulating film and the first semiconductor layer. The third semiconductor layer has a higher carrier concentration than the first semiconductor layer.