18234596. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sung Hwan Kim of Suwon-si (KR)
Heung Seok Ryu of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234596 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes an active pattern, gate structures, source/drain patterns, a silicide mask pattern, and contact silicide film, among other components.
- The active pattern extends in one direction, with gate structures spaced out in another direction.
- The gate structures consist of gate electrodes that extend in a different direction from the active pattern.
- Source/drain patterns are located between adjacent gate structures.
- A silicide mask pattern covers the source/drain patterns, with its upper surface lower than the gate electrode's upper surface.
- Source/drain contacts are connected to the source/drain patterns.
- A contact silicide film is present between the source/drain contact and the source/drain pattern, in contact with the bottom surface of the silicide mask pattern.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.
Problems Solved: - Enhances the conductivity and connectivity of semiconductor devices. - Helps in reducing resistance and improving overall device performance.
Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced conductivity and connectivity. - Improved overall functionality of integrated circuits.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It can also find applications in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical imaging devices.
Questions about the Technology: 1. How does this semiconductor device technology improve the performance of integrated circuits? 2. What are the specific advantages of using a silicide mask pattern in semiconductor devices?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology to ensure optimal performance and efficiency in electronic devices. Regularly check for new research findings and developments in the field to stay ahead of the competition.
Original Abstract Submitted
A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.
