18234344. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hiroki Hatada of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234344 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple semiconductor regions, insulating film, and electrodes. The second semiconductor region contains a high-concentration boundary region facing the second electrode, with the insulating film having different regions of varying thickness.
- The device includes a first, second, and third semiconductor region of different conductivity types.
- An insulating film is present in all three regions.
- A second electrode is adjacent to the second semiconductor region through the insulating film.
- The second semiconductor region has a high-concentration boundary region.
- The insulating film has regions of different thicknesses.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the field of integrated circuits and microelectronics.
Problems Solved: - This technology addresses the need for efficient and precise control of semiconductor device properties. - It helps in enhancing the performance and reliability of semiconductor devices.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced control over semiconductor properties. - Increased efficiency and reliability of electronic systems.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronic Systems This technology could be commercially applied in the manufacturing of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It could also have applications in industrial electronics and telecommunications equipment.
Questions about the technology: 1. How does the presence of different semiconductor regions impact the overall performance of the device? 2. What are the specific advantages of having a high-concentration boundary region in the second semiconductor region?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and research related to the optimization of semiconductor device structures for improved performance and functionality.
Original Abstract Submitted
A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductivity type disposed; a second semiconductor region of a second conductivity type disposed on the first region; a third semiconductor region of the first conductivity type disposed on the second region; an insulating film disposed in the first, second and third regions; and a second electrode disposed in the insulating film so as to be adjacent to the second region via the insulating film. The second region includes a boundary region that is in contact with the insulating film and faces the second electrode, the boundary region includes a high-concentration region, the insulating film includes a first region in contact with the high-concentration region and a second region in contact with a low-concentration region, and a thickness of the second region is smaller than a thickness of the first region.
