18224546. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
HYOUNGYOL Mun of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18224546 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes multiple layers and structures that enable efficient operation and performance.
- The device consists of a semiconductor layer on a substrate, with insulating layers and conductive structures stacked on top of each other.
- The first conductive structure penetrates the insulating layers vertically and is connected to the semiconductor layer.
- A diffusion barrier layer covers the top surface of the insulating layer and extends to the side surface of the first conductive structure.
- The second conductive structure also penetrates the insulating layers vertically and is connected to the first conductive structure.
- The lowermost surface of the second conductive structure is positioned higher than the top surface of the first insulating layer, enhancing the device's overall performance.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the efficiency and reliability of integrated circuits and other electronic components.
Problems Solved: - The technology addresses the need for better connectivity and performance in semiconductor devices. - It helps in reducing signal loss and improving overall functionality.
Benefits: - Enhanced performance and efficiency in semiconductor devices. - Improved connectivity and signal transmission capabilities.
Commercial Applications: - The technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and IoT devices. - It has the potential to revolutionize the semiconductor industry by enabling faster and more reliable devices.
Questions about the technology:
1. How does the diffusion barrier layer contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of having the second conductive structure positioned higher than the first insulating layer?
Original Abstract Submitted
A semiconductor device may include a semiconductor layer on a substrate, a first insulating layer on the semiconductor layer, a first conductive structure, which is provided to penetrate the first insulating layer in a vertical direction perpendicular to a bottom surface of the substrate and is connected to the semiconductor layer, a second insulating layer covering the first insulating layer and the first conductive structure, a second conductive structure, which is provided to penetrate the second insulating layer in the vertical direction and is connected to the first conductive structure, and a diffusion barrier layer covering a top surface of the first insulating layer and extending to a side surface of the first conductive structure. The lowermost surface of the second conductive structure may be located at a height higher than the top surface of the first insulating layer.
