18172308. MEMORY DEVICE simplified abstract (MACRONIX INTERNATIONAL CO., LTD.)

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MEMORY DEVICE

Organization Name

MACRONIX INTERNATIONAL CO., LTD.

Inventor(s)

Chih-Wei Hu of Miaoli County (TW)

Teng-Hao Yeh of Hsinchu County (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18172308 titled 'MEMORY DEVICE

The abstract describes a memory device, such as a three-dimensional AND or NOR flash memory, that includes a memory cell block, multiple first bit line switches, multiple second bit line switches, a first switch, and a second switch. The memory cell block is divided into a first sub memory cell block and a second sub memory cell block. The first bit line switches are respectively coupled to multiple first local bit lines and commonly coupled to a first sub global bit line. The second bit line switches are respectively coupled to multiple second local bit lines and commonly coupled to a second sub global bit line. The first switch is coupled between the first sub global bit line and a global bit line and controlled by a first control signal. The second switch is coupled between the second sub global bit line and the global bit line and controlled by a second control signal.

  • Memory device with a memory cell block divided into sub blocks
  • Multiple first and second bit line switches for local and global bit lines
  • First and second switches controlled by specific signals
  • Three-dimensional AND or NOR flash memory technology
  • Enhanced memory cell organization for improved performance

Potential Applications: - Data storage systems - Computer memory modules - Mobile devices - Embedded systems - IoT devices

Problems Solved: - Efficient data storage and retrieval - Enhanced memory cell organization - Improved performance and reliability

Benefits: - Faster data access speeds - Higher storage capacity - Reduced power consumption - Enhanced data security - Improved overall system performance

Commercial Applications: Title: Advanced Memory Devices for Next-Generation Electronics This technology can be used in various commercial applications such as: - Consumer electronics - Data centers - Automotive industry - Aerospace technology - Medical devices

Prior Art: Researchers can explore prior art related to three-dimensional memory devices, flash memory technology, and memory cell organization to understand the evolution of this technology and potential areas for further innovation.

Frequently Updated Research: Stay updated on the latest advancements in three-dimensional memory devices, flash memory technology, and memory cell organization to leverage the most recent developments in the field.

Questions about Memory Devices: 1. How does the memory cell block organization impact the performance of the memory device?

  - The memory cell block organization plays a crucial role in optimizing data storage and retrieval processes, leading to improved overall performance.

2. What are the key differences between three-dimensional AND and NOR flash memory technologies?

  - Three-dimensional AND and NOR flash memory technologies differ in their operational principles and data storage capabilities, catering to different application requirements.


Original Abstract Submitted

A memory device, such as a three-dimensional AND or NOR flash memory includes a memory cell block, multiple first bit line switches, multiple second bit line switches, a first switch, and a second switch. The memory cell block is divided into a first sub memory cell block and a second sub memory cell block. The first bit line switches are respectively coupled to multiple first local bit lines and commonly coupled to a first sub global bit line. The second bit line switches are respectively coupled to multiple second local bit lines and commonly coupled to a second sub global bit line. The first switch is coupled between the first sub global bit line and a global bit line and controlled by a first control signal. The second switch is coupled between the second sub global bit line and the global bit line and controlled by a second control signal.