18170581. SEMICONDUCTOR DEVICE WITH PAD CONTACT FEATURE AND METHOD THEREFOR simplified abstract (NXP USA, Inc.)
Contents
SEMICONDUCTOR DEVICE WITH PAD CONTACT FEATURE AND METHOD THEREFOR
Organization Name
Inventor(s)
Trent Uehling of New Braunfels TX (US)
SEMICONDUCTOR DEVICE WITH PAD CONTACT FEATURE AND METHOD THEREFOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18170581 titled 'SEMICONDUCTOR DEVICE WITH PAD CONTACT FEATURE AND METHOD THEREFOR
The abstract describes a method of manufacturing a semiconductor device involving the formation of a conductive probe plug and a copper pillar on a semiconductor die.
- Conductive probe plug formed on die pad via electroless plating process
- Copper pillar formed over probe plug via electrolytic plating process
- Solder plate material plated on top surface of copper pillar to form solder cap
- Innovative process for creating electrical connections in semiconductor devices
- Improves reliability and performance of semiconductor devices
Potential Applications:
- Semiconductor manufacturing industry
- Electronics industry for various devices requiring precise electrical connections
Problems Solved:
- Ensures reliable electrical connections in semiconductor devices
- Enhances performance and durability of electronic components
Benefits:
- Improved reliability of semiconductor devices
- Enhanced performance and longevity of electronic products
Commercial Applications:
- Semiconductor manufacturing companies
- Electronics manufacturers for various consumer and industrial products
Questions about the technology: 1. How does the electroless plating process contribute to the formation of the conductive probe plug? 2. What are the advantages of using a solder cap on top of the copper pillar in semiconductor devices?
Original Abstract Submitted
A method of manufacturing a semiconductor device is provided. The method includes forming a conductive probe plug on an exposed portion of a die pad of a semiconductor die by way of an electroless plating process. A top surface of the conductive probe plug extends above a top surface of a top passivation layer of the semiconductor die. A copper pillar is formed over the conductive probe plug by way of an electrolytic plating process. Outer sidewalls of the copper pillar surround the top surface of the conductive probe plug. A top surface of the copper pillar is plated with a solder plate material and reflowed to form a solder cap on the top of the copper pillar.
