18168243. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shuhei Tokuyama of Nonoichi Ishikawa (JP)
Tsuyoshi Kachi of Kanazawa Ishikawa (JP)
Toshifumi Nishiguchi of Hakusan Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18168243 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various components such as electrodes, semiconductor regions of different conductivity types, insulating films, and more. Here is a simplified explanation of the patent application:
- The device consists of multiple semiconductor regions of different conductivity types stacked on top of each other.
- Electrodes are placed within the semiconductor regions to control the flow of current.
- Insulating films separate different components of the device to prevent interference.
Potential Applications
This semiconductor device could be used in various electronic applications such as power electronics, sensors, and communication devices.
Problems Solved
This technology helps in improving the efficiency and performance of electronic devices by providing better control over the flow of current.
Benefits
The semiconductor device offers enhanced functionality, improved power handling capabilities, and increased reliability in electronic systems.
Potential Commercial Applications
This technology could be applied in industries such as automotive, telecommunications, and renewable energy for developing advanced electronic devices.
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with stacked semiconductor regions and electrodes for controlling current flow.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This article does not provide a direct comparison with existing semiconductor devices to evaluate its efficiency and performance.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not detail the specific manufacturing processes used to produce this semiconductor device.
Original Abstract Submitted
A semiconductor device according to the present embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; a second semiconductor region of a second conductivity type disposed on the first semiconductor region; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; a second electrode disposed in the first semiconductor region; a third electrode facing the second semiconductor region via a second insulating film; a fourth electrode having a portion adjacent to a part of the second semiconductor region and the third semiconductor region in the second direction, the second semiconductor region, and the third semiconductor region; and a fifth electrode disposed in the first insulating film, having a bottom located closer to the first electrode than a bottom of the portion, having a top located on an upper surface of the first insulating film.
