18157939. SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE simplified abstract (GlobalFoundries U.S. Inc.)
Contents
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE
Organization Name
Inventor(s)
Shesh Mani Pandey of Saratoga Springs NY (US)
Rajendran Krishnasamy of Essex Junction VT (US)
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157939 titled 'SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE
The semiconductor structure described in the patent application includes a semiconductor device with porous semiconductor material adjacent to an isolation structure within the active device region.
- The semiconductor device can be a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET).
- The LDMOSFET includes an active device region, a well region, an isolation structure, a porous region, and a drain drift region.
- The porous region modifies the electric field in the drain drift region, improving both breakdown voltage and transconductance of the device.
Potential Applications: - Power electronics - Semiconductor manufacturing - Integrated circuits
Problems Solved: - Improved breakdown voltage and transconductance in semiconductor devices - Enhanced performance of LDMOSFETs
Benefits: - Higher efficiency in power electronics - Increased reliability in semiconductor devices - Improved overall performance of integrated circuits
Commercial Applications: - Power management systems - Electric vehicles - Renewable energy technologies
Questions about Semiconductor Structure with Porous Semiconductor Material: 1. How does the porous region in the semiconductor device impact its performance? 2. What are the specific advantages of using porous semiconductor material in LDMOSFETs?
Frequently Updated Research: - Ongoing studies on optimizing the design and materials used in semiconductor structures for enhanced performance and efficiency.
Original Abstract Submitted
Disclosed are embodiments of a semiconductor structure including a semiconductor device with an active device region and, within the active device region, porous semiconductor material adjacent to an isolation structure. In some embodiments, the semiconductor device can be a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The LDMOSFET can include an active device region, a well region within the active device region and, within the well region, an isolation structure, a porous region immediately adjacent to the isolation structure, and a drain drift region that borders the isolation structure (e.g., between a channel region and a drain region). The porous region can modify the electric field in the drain drift region around the isolation structure and, as a result, can improve both drain-to-source breakdown voltage (BVdss) and transconductance (Gm) of the device. Also disclosed are method embodiments for forming the semiconductor structure.
