18141060. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18141060 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes several components such as bit lines, gate electrodes, a gate insulation pattern, and a channel structure.
- Bit lines: These lines extend in a first direction on the substrate and may be spaced apart from each other in a second direction.
- Gate electrodes: These electrodes are spaced apart from each other in the first direction and extend in the second direction.
- Gate insulation pattern: This pattern is present between the gate electrodes and the channel structure.
- Channel structure: This structure is also present on the substrate.
Potential applications of this technology:
- Integrated circuits: The semiconductor device can be used in the fabrication of integrated circuits for various electronic devices such as computers, smartphones, and tablets.
- Memory devices: The device can be utilized in the production of memory devices like RAM and flash memory.
- Microprocessors: This technology can be employed in the development of microprocessors used in computing devices.
Problems solved by this technology:
- Efficient data transfer: The bit lines and gate electrodes allow for the efficient transfer of data within the semiconductor device.
- Space optimization: The spacing of the bit lines and gate electrodes in different directions helps in optimizing the use of space on the substrate.
- Enhanced performance: The presence of the gate insulation pattern and channel structure improves the performance of the semiconductor device.
Benefits of this technology:
- Higher speed: The efficient data transfer enabled by the bit lines and gate electrodes results in faster operation of the semiconductor device.
- Increased storage capacity: The use of this technology allows for higher storage capacity in memory devices.
- Improved power efficiency: The optimized space utilization and enhanced performance contribute to improved power efficiency in the semiconductor device.
Original Abstract Submitted
A semiconductor device includes bit lines, gate electrodes, a gate insulation pattern and a channel structure on a substrate. Each of the bit lines extends in a first direction, and the bit lines may be spaced apart from each other in a second direction. The gate electrodes are spaced apart from each other in the first direction, and each of the gate electrodes extends in the second direction.
