18116071. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18116071 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate, a lower electrode, a support, a dielectric layer, and an upper electrode. The lower electrode has a base electrode layer containing a halogen element and an insertion layer containing carbon. The insertion layer is inserted in a portion of the lower electrode adjacent to the support and the dielectric layer.
- The lower electrode of the semiconductor device includes a base electrode layer and an insertion layer.
- The base electrode layer contains a halogen element.
- The insertion layer contains carbon.
- The insertion layer is inserted in a portion of the lower electrode.
- The portion of the lower electrode is adjacent to the support and the dielectric layer.
Potential applications of this technology:
- Semiconductor devices using this structure can be used in various electronic devices such as computers, smartphones, and tablets.
- This technology can be applied in memory devices, logic circuits, and other integrated circuits.
Problems solved by this technology:
- The insertion layer containing carbon helps improve the performance and reliability of the semiconductor device.
- The use of a halogen element in the base electrode layer enhances the electrical properties of the lower electrode.
Benefits of this technology:
- The semiconductor device with this structure exhibits improved performance and reliability.
- The use of a halogen element and carbon in the lower electrode provides enhanced electrical properties.
- This technology enables the fabrication of more efficient and advanced semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.