18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sung-Li Wang of Zhubei City (TW)
Yasutoshi Okuno of Hsinchu (TW)
Shih-Chuan Chiu of Hsinchu (TW)
CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18097323 titled 'CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS
Simplified Explanation
The patent application describes a method of forming a semiconductor device and a semiconductor device itself. Here are the key points:
- Method of forming a semiconductor device:
* Forming a source/drain region on a substrate * Depositing a metal-rich metal silicide layer on the source/drain region * Depositing a silicon-rich metal silicide layer on the metal-rich metal silicide layer * Forming a contact plug on the silicon-rich metal silicide layer
- Semiconductor device:
* Includes a fin structure on a substrate * Has a source/drain region on the fin structure * Features a metal-rich metal silicide layer on the source/drain region * Includes a silicon-rich metal silicide layer on the metal-rich metal silicide layer * Has a contact plug on the silicon-rich metal silicide layer
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced conductivity and contact resistance in source/drain regions
- Better integration and compatibility with other components in a semiconductor device
Benefits of this technology:
- Higher performance and faster operation of semiconductor devices
- Improved reliability and durability of the devices
- Enhanced integration and miniaturization capabilities
Original Abstract Submitted
A method of forming a semiconductor device includes forming a source/drain region on a substrate, depositing a metal-rich metal silicide layer on the source/drain region, depositing a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and forming a contact plug on the silicon-rich metal silicide layer. This disclosure also describes a semiconductor device including a fin structure on a substrate, a source/drain region on the fin structure, a metal-rich metal silicide layer on the source/drain region, a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and a contact plug on the silicon-rich metal silicide layer.