18084484. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Keita Saito of Nonoichi Ishikawa (JP)
Kouta Tomita of Nonoichi Ishikawa (JP)
Tatsuya Nishiwaki of Yokohama Kanagawa (JP)
Yasunobu Saito of Nomi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18084484 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of multiple electrodes, a semiconductor part, insulating members, and a conductive member. Here is a simplified explanation of the patent application:
- The device includes a first electrode, a semiconductor part, a second electrode in one region of the semiconductor part, a third electrode in another region of the semiconductor part, insulating members in the first and second regions, a fourth electrode in the insulating members in the first and second regions, a fifth electrode in the insulating members between the first and fourth electrodes, and a conductive member in at least the second region connected to the third, fourth, and fifth electrodes.
- Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications such as sensors, actuators, and integrated circuits.
- Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a structured layout of electrodes and insulating members, enhancing the overall functionality of the device.
- Benefits
The structured design of the semiconductor device allows for better control of electrical signals, leading to improved reliability, stability, and performance in electronic applications.
- Potential Commercial Applications
The technology could find commercial applications in industries such as telecommunications, consumer electronics, automotive, and healthcare for the development of high-performance electronic devices.
- Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with multiple electrodes and insulating members for improved functionality and performance.
- Unanswered Questions
- How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of efficiency and performance.
- What are the specific materials used in the construction of this semiconductor device and how do they contribute to its overall functionality?
The article does not delve into the specific materials used in the construction of the semiconductor device and their individual contributions to its functionality.
Original Abstract Submitted
A semiconductor device includes: a first electrode; a semiconductor part located on the first electrode; a second electrode located in a first region on the semiconductor part; a third electrode located in a second region on the semiconductor part; an insulating member located in the semiconductor part in the first and second regions; a fourth electrode located in the insulating member in the first and second regions; a fifth electrode located in the insulating member between the first electrode and the fourth electrode in the first and second regions; and a conductive member located at least in the second region. The conductive member is connected to the third, fourth, and fifth electrodes.
