18083075. Method for Gapfill simplified abstract (Applied Materials, Inc.)
Contents
- 1 Method for Gapfill
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Method for Gapfill - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Method for Gapfill
Organization Name
Inventor(s)
Aixi Zhang of Sunnyvale CA (US)
Rongjun Wang of Dublin CA (US)
Method for Gapfill - A simplified explanation of the abstract
This abstract first appeared for US patent application 18083075 titled 'Method for Gapfill
Simplified Explanation
The method described in the abstract involves depositing sacrificial Si and metal layers in an opening of a feature on a substrate, replacing the Si layer with the metal layer, and filling the gap with a metal gapfill material.
- Depositing sacrificial Si and metal layers in an opening and on a field of a substrate
- Replacing at least a portion of the sacrificial Si layer with the metal layer
- Depositing a metal gapfill material in the opening directly over the metal layer to completely fill the opening
Potential Applications
This technology could be applied in semiconductor manufacturing, specifically in the fabrication of integrated circuits and other electronic devices.
Problems Solved
This method helps to fill small gaps and trenches in semiconductor devices, improving the overall performance and reliability of the devices.
Benefits
- Improved gap filling in semiconductor devices - Enhanced device performance and reliability - Cost-effective manufacturing process
Potential Commercial Applications
"Gap Fill Method for Semiconductor Devices" - Improving Semiconductor Manufacturing Processes
Possible Prior Art
There may be prior art related to gap fill methods in semiconductor manufacturing, but specific examples are not provided in this abstract.
Unanswered Questions
How does this method compare to existing gap fill techniques in terms of efficiency and cost-effectiveness?
This article does not provide a direct comparison with existing techniques, leaving the reader to wonder about the advantages of this new method.
Are there any limitations or challenges associated with implementing this gap fill method on a larger scale in semiconductor production facilities?
The abstract does not address potential challenges or limitations that may arise when scaling up this gap fill method for commercial production.
Original Abstract Submitted
A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in the opening and on the field directly over the metal layer, where the metal gapfill material completely fills the opening.
