18067207. HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS simplified abstract (International Business Machines Corporation)
Contents
- 1 HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Questions about Semiconductor Thermal Management
- 1.9 Original Abstract Submitted
HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS
Organization Name
International Business Machines Corporation
Inventor(s)
Kisik Choi of Watervliet NY (US)
Nicholas Alexander Polomoff of Hopewell Junction NY (US)
Brent A. Anderson of Jericho VT (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
Ruilong Xie of Niskayuna NY (US)
Terence Hook of Jericho Center VT (US)
Matthew Angyal of Stormville NY (US)
HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18067207 titled 'HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS
The patent application describes semiconductor devices with a front-end-of-line (FEOL) layer and a back-end-of-line (BEOL) layer that includes a thermal transfer structure in contact with the FEOL layer. A carrier wafer is bonded to the BEOL layer and includes a thermal dissipation structure in contact with the thermal transfer structure.
- FEOL layer and BEOL layer in semiconductor devices
- Thermal transfer structure in the BEOL layer
- Carrier wafer bonded to the BEOL layer
- Thermal dissipation structure in the carrier wafer
- Enhanced thermal management in semiconductor devices
Potential Applications
The technology can be applied in various semiconductor devices where efficient thermal management is crucial, such as high-performance computing, automotive electronics, and telecommunications equipment.
Problems Solved
The innovation addresses the challenge of thermal dissipation in semiconductor devices, ensuring optimal performance and reliability by effectively managing heat generated during operation.
Benefits
- Improved thermal management in semiconductor devices - Enhanced performance and reliability - Extended lifespan of the devices - Increased efficiency in heat dissipation
Commercial Applications
The technology has significant commercial potential in industries that rely on high-performance semiconductor devices, including data centers, automotive manufacturers, and telecommunications companies. By improving thermal management, the technology can help enhance the overall performance and longevity of electronic systems.
Questions about Semiconductor Thermal Management
How does the thermal transfer structure improve heat dissipation in semiconductor devices?
The thermal transfer structure facilitates the efficient transfer of heat from the FEOL layer to the BEOL layer, where it can be dissipated through the carrier wafer's thermal dissipation structure.
What are the potential implications of enhanced thermal management in semiconductor devices for the electronics industry?
Improved thermal management can lead to more reliable and efficient electronic systems, reducing the risk of overheating and enhancing overall performance in various applications.
Original Abstract Submitted
Semiconductor devices and methods of forming the same include a front-end-of-line (FEOL) layer. A back-end-of-line (BEOL) layer includes a thermal transfer structure in contact with the FEOL layer. A carrier wafer is bonded to the BEOL layer and includes a thermal dissipation structure in contact with the thermal transfer structure.
- International Business Machines Corporation
- Kisik Choi of Watervliet NY (US)
- Nicholas Alexander Polomoff of Hopewell Junction NY (US)
- Brent A. Anderson of Jericho VT (US)
- Lawrence A. Clevenger of Saratoga Springs NY (US)
- Ruilong Xie of Niskayuna NY (US)
- Terence Hook of Jericho Center VT (US)
- Matthew Angyal of Stormville NY (US)
- FEE LI Lie of Albany NY (US)
- H01L23/367
- H01L23/00
- H01L23/522
- H01L23/528
- CPC H01L23/367