17962577. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Sangmin Kang of Hwaseong-si (KR)
Hyungjoon Kim of Yongin-si (KR)
Jihoon Choi of Seongnam-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17962577 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with gate electrodes and a memory channel structure on a substrate. The gate electrodes are vertically spaced apart from each other, and the memory channel structure extends vertically on the substrate. The memory channel structure includes a filling pattern, a channel, and a charge storage structure. The filling pattern is made of a material with high thermal conductivity.
- Gate electrodes and memory channel structure on a substrate
- Gate electrodes are vertically spaced apart
- Memory channel structure extends vertically on the substrate
- Memory channel structure includes a filling pattern, a channel, and a charge storage structure
- Filling pattern made of a material with high thermal conductivity
Potential Applications
- Semiconductor devices
- Memory storage systems
- Integrated circuits
Problems Solved
- Efficient heat dissipation in semiconductor devices
- Improved performance and reliability of memory channel structures
Benefits
- Enhanced thermal conductivity for better heat dissipation
- Increased performance and reliability of semiconductor devices
- Improved efficiency and longevity of memory storage systems
Original Abstract Submitted
A semiconductor device includes gate electrodes on a substrate and a memory channel structure extending through the gate electrodes. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The memory channel structure extends in the vertical direction on the substrate. The memory channel structure includes a first filling pattern extending in the vertical direction, a channel on a sidewall of the first filling pattern, and a charge storage structure on a sidewall of the channel. The first filling pattern includes a material having a thermal conductivity equal to or more than about 100 W/m·K at a temperature of about 25° C.
