17941574. MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Paul Michael Solomon of Westchester NY (US)
Takashi Ando of Eastchester NY (US)
Eduard Albert Cartier of New York NY (US)
John Rozen of Hastings on Hudson NY (US)
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17941574 titled 'MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
Simplified Explanation
The abstract describes a grain-boundary self-aligned resistive memory structure that allows for the formation of multiple oxide-based ReRAM elements in parallel, each with its own compliance resistor. This structure aims to reduce variability in the composite ReRAM cell by forming multiple filaments, one per element.
- Enables closely-packed formation of multiple oxide-based ReRAM elements in parallel
- Each element has its own compliance resistor
- Capable of forming multiple filaments, reducing variability in the composite ReRAM cell
Potential Applications
The technology could be applied in:
- Memory storage devices
- Neuromorphic computing
- Internet of Things (IoT) devices
Problems Solved
- Variability in composite ReRAM cells
- Closely-packed formation of multiple ReRAM elements
Benefits
- Improved reliability and performance
- Enhanced data storage capacity
- Reduced power consumption
Potential Commercial Applications
Enhancing Memory Storage Devices with Grain-Boundary Self-Aligned Resistive Memory Structures
Original Abstract Submitted
A grain-boundary self-aligned resistive memory structure is provided enabling the closely-packed formation of multiple, oxide-based, ReRAM elements in parallel, each with its own compliance resistor. The structure is capable of forming multiple filaments, one per element, with the aim of reducing the variability in the composite ReRAM cell.