17851721. MEMORY FAULT NOTIFICATION simplified abstract (MICRON TECHNOLOGY, INC.)

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MEMORY FAULT NOTIFICATION

Organization Name

MICRON TECHNOLOGY, INC.

Inventor(s)

Scott E. Schaefer of Boise ID (US)

MEMORY FAULT NOTIFICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17851721 titled 'MEMORY FAULT NOTIFICATION

Simplified Explanation

Methods, systems, and devices for memory fault notification are disclosed in this patent application. The invention relates to a memory device that can detect and notify a host device of a fault condition in the memory.

  • The memory device receives a configuration corresponding to a circuit node of the memory device.
  • The circuit node can be selectively coupled with a set of resistors.
  • The memory device determines a fault condition and couples the circuit node to at least a first resistor based on the fault condition.
  • By coupling the circuit node to the first resistor, the memory device biases the circuit node to a first voltage value that meets a voltage threshold.
  • The memory device outputs an indication of a fault state to notify the host device that a fault has been detected.

Potential Applications

  • This technology can be applied in various memory devices such as computer RAM, flash memory, or solid-state drives (SSDs).
  • It can be used in data centers, servers, or any computing system that relies on memory for storing and retrieving data.

Problems Solved

  • Memory faults can lead to data corruption or loss, system crashes, and overall reduced performance.
  • Detecting and notifying faults in memory devices is crucial for maintaining data integrity and system reliability.
  • This technology solves the problem of timely and accurate fault detection in memory devices.

Benefits

  • The memory device can quickly detect and notify the host device of a fault condition, allowing for prompt action to be taken.
  • By selectively coupling the circuit node with resistors, the memory device can accurately determine the fault condition and bias the circuit node accordingly.
  • The voltage threshold ensures that the fault condition is properly identified and reported, enhancing the reliability of the memory device and the overall system.


Original Abstract Submitted

Methods, systems, and devices for memory fault notification are described. A memory device may receive a configuration corresponding to a circuit node of the memory device, where the circuit node may be selectively coupled with a set of resistors. The memory device may determine a fault condition and couple the circuit node to at least a first resistor based on determining the fault condition. The memory device may bias the circuit node to a first voltage value that satisfies a voltage threshold based on coupling the circuit node to the first resistor. The memory device may output an indication of a fault state to notify a host device that a fault has been detected.

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