17805586. MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID (US)
Ashonita A. Chavan of Boise ID (US)
MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17805586 titled 'MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE
Simplified Explanation
The patent application describes various structures, integrated assemblies, and memory devices. One such memory device includes multiple memory cells with specific components and arrangements.
- Each memory cell consists of a bottom electrode in the shape of an open top cylinder, containing a support pillar.
- The memory cell also includes a top electrode and an insulator that separates the top and bottom electrodes.
- Additionally, a leaker device with an open top cylinder shape is present in the memory cell.
- The bottom surface of the leaker device abuts either the top surface of the bottom electrode or the top surface of the support pillar.
- The top surface of the leaker device abuts the bottom surface of a conductive plate.
- The memory device also includes the conductive plate.
Potential applications of this technology:
- Memory devices with improved performance and reliability.
- Enhanced data storage capabilities in electronic devices.
- Increased efficiency in data processing and retrieval.
Problems solved by this technology:
- Addressing the need for memory devices with better performance and reliability.
- Overcoming limitations in data storage capacity and speed.
- Resolving issues related to data loss or corruption.
Benefits of this technology:
- Improved memory cell design for enhanced functionality.
- Increased data storage capacity and faster data access.
- Enhanced reliability and durability of memory devices.
Original Abstract Submitted
Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, a memory device includes multiple memory cells. Each memory cell may include a bottom electrode having an open top cylinder shape that contains a support pillar, may include a top electrode, may include an insulator that separates the top electrode from the bottom electrode, and may include a leaker device having an open top cylinder shape. A bottom surface of the leaker device may abut at least one of a top surface of the bottom electrode or a top surface of the support pillar. A top surface of the leaker device may abut a bottom surface of a conductive plate. The memory device may also include the conductive plate.