17750723. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Hyebin Choi of Hwaseong-si (KR)
Chansic Yoon of Anyang-si (KR)
Gyuhyun Kil of Hwaseong-si (KR)
Junghoon Han of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17750723 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with a unique gate structure and spacers.
- The gate structure is located on a substrate and has a sidewall with a concave lower portion and a vertical upper portion.
- A first gate spacer is formed on the upper sidewall portion, while a second gate spacer is formed on the concave lower sidewall portion and the outer sidewall of the first gate spacer.
- The second gate spacer makes contact with the lower surface of the first gate spacer and is made of nitride material.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems solved by this technology:
- Provides a more efficient and effective gate structure for semiconductor devices
- Improves the performance and reliability of the devices
Benefits of this technology:
- Enhanced functionality and performance of semiconductor devices
- Improved manufacturing processes and yields
- Increased reliability and durability of the devices
Original Abstract Submitted
A semiconductor device including a gate structure on a substrate, a first gate spacer, and a second gate spacer may be provided. A sidewall of the gate structure includes a concave lower sidewall portion and an upper sidewall portion that is vertical with respect to an upper surface of the substrate. The first gate spacer is formed on the upper sidewall portion of the sidewall of the gate structure. The second gate spacer is formed on the concave lower sidewall portion of the sidewall of the gate structure and an outer sidewall of the first gate spacer. The second gate spacer contacts a lower surface of the first gate spacer and includes nitride.
