17730928. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sujin Jung of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17730928 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a unique structure and configuration. Here are the key points:
- The device has a fin-type active region that protrudes from a substrate and extends in one direction.
- Multiple channel layers are placed on the fin-type active region, spaced apart from each other in a perpendicular direction to the substrate's upper surface.
- A gate structure intersects the fin-type active region, surrounds each channel layer, and extends in the perpendicular direction.
- Fence spacers are located on the side surfaces of the fin-type active region, adjacent to the gate structure, and also extend in the perpendicular direction.
- A source/drain region is present between the fence spacers on the fin-type active region, connected to each channel layer, and has voids in the side surfaces next to the fence spacers.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
- It can also be applied in industrial applications, including automotive electronics, aerospace systems, and communication devices.
Problems solved by this technology:
- The unique configuration of the device helps to improve its performance and efficiency.
- The presence of the fin-type active region and the multiple channel layers allows for better control of the electrical properties of the device.
- The gate structure and fence spacers help in reducing leakage currents and improving the overall functionality of the device.
Benefits of this technology:
- The semiconductor device offers improved performance and efficiency compared to conventional devices.
- It provides better control over the electrical properties, leading to enhanced functionality.
- The reduced leakage currents contribute to lower power consumption and improved power efficiency.
Original Abstract Submitted
A semiconductor device includes a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of channel layers on the fin-type active region that are spaced apart from each other in a second direction that is perpendicular to an upper surface of the substrate, a gate structure that intersects the fin-type active region, extends in the second direction, and surrounds each of the plurality of channel layers in a third direction, fence spacers on side surfaces of the fin-type active region in the second direction on sides of the gate structure and extending in the second direction, and a source/drain region between the fence spacers on the fin-type active region at sides of the gate structure, connected to each of the plurality of channel layers, and having voids in side surfaces adjacent the fence spacers.
