17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ashim Dutta of Clifton Park NY (US)
Chih-Chao Yang of Glenmont NY (US)
SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17542696 titled 'SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY
Simplified Explanation
The abstract describes a patent application for a subtractive top via used as a bottom electrode contact for an embedded memory structure. The process involves depositing a conductive material on an underlayer and etching it to create an extended via and a conductive pad as a single unit. The extended via is positioned next to the memory structure and serves as the first contact for the memory structure.
- The invention involves a subtractive top via used as a bottom electrode contact for embedded memory structures.
- A conductive material is deposited on an underlayer and then etched to form an extended via and a conductive pad.
- The extended via is positioned adjacent to the memory structure, serving as the first contact for the memory structure.
- This technology provides a more efficient and integrated approach to forming bottom electrode contacts for embedded memory structures.
Potential Applications
This technology can be applied in various industries and applications, including:
- Semiconductor manufacturing
- Memory chip production
- Embedded memory structures in electronic devices
Problems Solved
The technology addresses the following problems:
- Complex and time-consuming processes for forming bottom electrode contacts
- Lack of integration between bottom electrode contacts and memory structures
- Inefficient use of materials and resources in the manufacturing process
Benefits
The benefits of this technology include:
- Simplified and streamlined process for forming bottom electrode contacts
- Improved integration between bottom electrode contacts and memory structures
- Enhanced efficiency and cost-effectiveness in the manufacturing process
Original Abstract Submitted
Embodiments of the invention include a subtractive top via as a bottom electrode contact for an embedded memory structure. Forming the bottom electrode contact includes depositing a conductive material on an underlayer and etching the conductive material to form an extended via and a conductive pad as an integral unit. The extended via extends from the conductive pad such that the extended via is adjacent to a memory structure, the extended via being formed as a first contact for the memory structure.