Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
(previous page) (next page)I
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract
- Intel corporation (20240128340). INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178226). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract
- Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract
- Intel corporation (20240186395). LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186416). TMD INVERTED NANOWIRE INTEGRATION simplified abstract
- Intel corporation (20240194673). INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES simplified abstract
- Intel corporation (20240204103). TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS simplified abstract
- Intel corporation (20240213331). GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240222440). TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract
- Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract
- Intel corporation (20240222509). SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract
- Intel corporation (20240224508). INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA simplified abstract
- Intel corporation (20240234422). STACKED FORKSHEET TRANSISTORS simplified abstract
- Intel corporation (20240243202). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS simplified abstract
- Intel corporation (20240243203). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES simplified abstract
- Intel corporation (20240258427). SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES simplified abstract
- Intel corporation (20240266353). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CHANNEL STRUCTURES USING BOTTOM-UP APPROACH simplified abstract
- Intel corporation (20240274718). FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM simplified abstract
- Intel corporation (20240290789). TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SINGLE DIE simplified abstract
- Intel corporation (20240321987). LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract
- Intel corporation (20240332175). BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE simplified abstract
- Intel corporation (20240332301). INTEGRATED CIRCUIT STRUCTURES WITH SUB-FIN ISOLATION simplified abstract
- Intel corporation (20240332302). INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA simplified abstract
- Intel corporation (20240332392). INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL simplified abstract
- Intel corporation (20240332399). GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240334669). BURIED LOW-K DIELECTRIC TO PROTECT SOURCE/DRAIN TO GATE CONNECTION simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on August 15th, 2024
- Intel Corporation patent applications on August 1st, 2024
- Intel Corporation patent applications on August 29th, 2024
- Intel Corporation patent applications on August 8th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on July 11th, 2024
- Intel Corporation patent applications on July 18th, 2024
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 27th, 2024
- Intel Corporation patent applications on June 6th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on May 16th, 2024
- Intel Corporation patent applications on May 30th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- Intel Corporation patent applications on September 26th, 2024
- International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract
- International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract
- International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract
- International business machines corporation (20240113021). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract
- International business machines corporation (20240186375). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240186376). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract
- International business machines corporation (20240203993). LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract
- International business machines corporation (20240204042). DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract
- International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract
- International business machines corporation (20240213244). VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract
- International business machines corporation (20240282860). NONLINEAR CHANNEL simplified abstract
- International business machines corporation (20240321879). STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on August 22nd, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- International Business Machines Corporation patent applications on January 18th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 26th, 2024
K
- Kabushiki kaisha toshiba (20240096938). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- Kabushiki kaisha toshiba (20240096962). SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240096966). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096972). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096973). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096974). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240097020). SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- Kabushiki kaisha toshiba (20240097021). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Kabushiki kaisha toshiba (20240097022). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract
- Kabushiki kaisha toshiba (20240097023). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Kabushiki kaisha toshiba (20240097024). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240297213). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
- Kabushiki kaisha toshiba (20240297220). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
- Kabushiki kaisha toshiba (20240313045). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313055). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313083). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
- Kabushiki kaisha toshiba (20240313104). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313106). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313107). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313108). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313109). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313110). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321697). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321862). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321955). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240321967). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321968). SEMICONDUCTOR DEVICE simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 5th, 2024
- Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
M
- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract
- Micron technology, inc. (20240233797). MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
- Micron technology, inc. (20240234311). REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
- Micron technology, inc. (20240282620). SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract
- Micron technology, inc. (20240282856). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240282858). Integrated Assemblies having Transistors Configured for High-Voltage Applications, and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20240304722). MICROELECTRONIC DEVICES INCLUDING CONTACT STRUCTURES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240306399). Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on September 12th, 2024
- Mitsubishi electric corporation (20240136399). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
- Mitsubishi electric corporation (20240136439). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Mitsubishi electric corporation (20240234504). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
- Mitsubishi electric corporation (20240234570). SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Mitsubishi electric corporation (20240234575). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Mitsubishi electric corporation (20240250165). SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Mitsubishi electric corporation (20240297229). SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract
- Mitsubishi Electric Corporation patent applications on April 25th, 2024
- Mitsubishi Electric Corporation patent applications on July 11th, 2024
- Mitsubishi Electric Corporation patent applications on July 25th, 2024
- Mitsubishi Electric Corporation patent applications on September 5th, 2024
- Murata manufacturing co., ltd. (20240250145). FERROELECTRIC FILM, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC COMPONENT simplified abstract
- Murata manufacturing co., ltd. (20240313081). Low Leakage Replacement Metal Gate FET simplified abstract
- Murata Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Murata Manufacturing Co., Ltd. patent applications on September 19th, 2024
Q
- Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract
- Qualcomm incorporated (20240136357). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240234418). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240297218). TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/DRAIN SPACES simplified abstract
- QUALCOMM Incorporated patent applications on April 25th, 2024
- QUALCOMM Incorporated patent applications on July 11th, 2024
- QUALCOMM Incorporated patent applications on March 21st, 2024
- QUALCOMM Incorporated patent applications on March 28th, 2024
- QUALCOMM Incorporated patent applications on September 5th, 2024
R
- Robert bosch gmbh (20240136236). VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT simplified abstract
- Robert bosch gmbh (20240136435). FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION simplified abstract
- Robert bosch gmbh (20240213366). VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract
- Robert bosch gmbh (20240243170). MEMBRANE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME simplified abstract
- Robert bosch gmbh (20240322033). VERTICAL POWER TRANSISTOR simplified abstract
- Robert Bosch GmbH patent applications on April 25th, 2024
- Robert Bosch GmbH patent applications on February 15th, 2024
- Robert Bosch GmbH patent applications on January 18th, 2024
- Robert Bosch GmbH patent applications on July 18th, 2024
- Robert Bosch GmbH patent applications on June 27th, 2024
- Robert Bosch GmbH patent applications on September 26th, 2024
- Rohm co., ltd. (20240282738). SEMICONDUCTOR DEVICE simplified abstract
- Rohm co., ltd. (20240282851). SEMICONDUCTOR DEVICE simplified abstract
- ROHM CO., LTD. patent applications on August 22nd, 2024
S
- Samsung electronics co., ltd. (20240096894). SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240098984). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105842). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128268). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136290). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162293). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162307). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240162346). FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract
- Samsung electronics co., ltd. (20240164081). SEMICONDUCTOR DEVICE AND STACK OF SEMICONDUCTOR CHIPS simplified abstract
- Samsung electronics co., ltd. (20240164108). THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240178307). SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240186321). SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER simplified abstract
- Samsung electronics co., ltd. (20240186409). INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract
- Samsung electronics co., ltd. (20240194752). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240194761). ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194768). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194786). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240196623). ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240196624). METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract
- Samsung electronics co., ltd. (20240204050). SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract
- Samsung electronics co., ltd. (20240206188). FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract
- Samsung electronics co., ltd. (20240213317). SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract