Category:H01L21/768
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Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L21/00: Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- Subgroup H01L21/768: Processes or apparatus for applying a liquid or other fluent material to semiconductor wafers
This classification involves processes or apparatuses specifically adapted for manufacturing semiconductor devices, focusing on the application of liquids or other fluent materials to semiconductor wafers, crucial in the production of modern electronic components.
Pages in category "H01L21/768"
The following 200 pages are in this category, out of 1,447 total.
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- 18678306. SEMICONDUCTOR DEVICE HAVING A PASSIVATION LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18678463. Using A Self-Assembly Layer To Facilitate Selective Formation of An Etching Stop Layer simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18679002. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18679546. USING A LINER LAYER TO ENLARGE PROCESS WINDOW FOR A CONTACT VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18680253. SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP LAYER OF SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18680445. IMAGING DEVICE, MANUFACTURING METHOD, AND ELECTRONIC DEVICE simplified abstract (Sony Group Corporation)
- 18731337. METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE simplified abstract (United Microelectronics Corp.)
- 18731590. BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18732879. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18733342. Display Device and Display Driving Method simplified abstract (LG Display Co., Ltd.)
- 18733512. SEMICONDUCTOR DEVICE INCLUDING LINER STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18734212. METHOD OF MAKING AMPHI-FET STRUCTURE AND METHOD OF DESIGNING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18736075. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18736384. SEMICONDUCTOR DEVICE HAVING WAFER-TO-WAFER BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18736766. SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18743574. Air-Replaced Spacer for Self-Aligned Contact Scheme simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18744493. MICROFEATURE WORKPIECES AND METHODS FOR FORMING INTERCONNECTS IN MICROFEATURE WORKPIECES simplified abstract (Micron Technology, Inc.)
- 18745773. SELF-ALIGNED VIA STRUCTURES AND METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18745872. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18746055. INTERCONNECTION STRUCTURE simplified abstract (United Microelectronics Corp.)
- 18746181. Contact for Semiconductor Device and Method of Forming Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18747849. SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED)
- 18748250. CONTACT AND VIA STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749528. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18749534. METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749812. INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH AIR GAPS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749899. SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18751061. THERMAL PADS BETWEEN STACKED SEMICONDUCTOR DIES AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 18751628. SEMICONDUCTOR DEVICE STRUCTURE WITH INTERCONNECT STRUCTURE HAVING AIR GAP simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18751841. METHODS FOR FORMING SELF-ALIGNED INTERCONNECT STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18752525. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING DIFFERENTLY SIZED CONDUCTIVE CONTACT STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18753240. DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18753744. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18753766. CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18755041. METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING SEGMENTED INTERCONNECT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18756008. METHOD AND STRUCTURE FOR BARRIER-LESS PLUG simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
2
- 20240014105. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 20240030042. DIGITAL PEN WITH ENHANCED EDUCATIONAL AND THERAPEUTIC FEEDBACK simplified abstract (Unknown Organization)
- 20240038583. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240049388. SENSOR INTERPOSER EMPLOYING CASTELLATED THROUGH-VIAS simplified abstract (DexCom, Inc.)
- 20240055350. ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
- 20240087956.SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (samsung electronics co., ltd.)
A
- Advanced micro devices, inc. (20240113022). POWER VIA WITH REDUCED RESISTANCE simplified abstract
- ADVANCED MICRO DEVICES, INC. patent applications on April 4th, 2024
- Applied materials, inc. (20240249934). INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRIDE DEPOSITION simplified abstract
- Applied materials, inc. (20240249936). METHODS FOR REDUCING MICRO AND MACRO SCALLOPING ON SEMICONDUCTOR DEVICES simplified abstract
- Applied materials, inc. (20240254645). LOW TEMPERATURE HYBRID BONDING METALLIZATION simplified abstract
- Applied materials, inc. (20240258103). PLASMA TREATMENT OF BARRIER AND LINER LAYERS simplified abstract
- Applied materials, inc. (20240258161). METHODS OF FORMING INTERCONNECT STRUCTURES simplified abstract
- Applied materials, inc. (20240258164). METHODS OF FORMING INTERCONNECT STRUCTURES simplified abstract
- Applied materials, inc. (20240266175). CARBON AND BORON IMPLANTATION FOR BACKSIDE CHEMICAL MECHANICAL PLANARIZATION CONTROL simplified abstract
- Applied materials, inc. (20240266215). LOW STRESS TUNGSTEN LAYER DEPOSITION simplified abstract
- Applied materials, inc. (20240266319). Method of Multi-layer Die Stacking with Die-to-Wafer Bonding simplified abstract
- Applied materials, inc. (20240282631). INTEGRATION SOLUTION FOR NAND DEEP CONTACT GAP FILL simplified abstract
- Applied materials, inc. (20240282632). ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION simplified abstract
- Applied materials, inc. (20240282709). Layered Substrate with Ruthenium Layer and Method for Producing simplified abstract
- Applied materials, inc. (20240304495). HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES simplified abstract
- Applied materials, inc. (20240339358). METHOD OF FORMING A METAL LINER FOR INTERCONNECT STRUCTURES simplified abstract
- Applied Materials, Inc. patent applications on August 1st, 2024
- Applied Materials, Inc. patent applications on August 22nd, 2024
- Applied Materials, Inc. patent applications on August 8th, 2024
- Applied Materials, Inc. patent applications on July 25th, 2024
- Applied Materials, Inc. patent applications on October 10th, 2024
- Applied Materials, Inc. patent applications on September 12th, 2024
B
- Blockchain patent applications on 22nd Mar 2024
- Blockchain patent applications on April 11th, 2024
- Blockchain patent applications on April 18th, 2024
- Blockchain patent applications on April 4th, 2024
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 29th, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 21st, 2024
- Blockchain patent applications on May 16th, 2024
- Boe technology group co., ltd. (20240162138). METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE simplified abstract
- BOE TECHNOLOGY GROUP CO., LTD. patent applications on May 16th, 2024
G
H
- Huawei technologies co., ltd. (20240113186). Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract
- Huawei technologies co., ltd. (20240178103). Chip Stacked Structure and Manufacturing Method Thereof, Chip Package Structure, and Electronic Device simplified abstract
- Huawei technologies co., ltd. (20240274688). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE simplified abstract
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 4th, 2024
- Huawei Technologies Co., Ltd. patent applications on August 15th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on May 30th, 2024
I
- Infineon technologies ag (20240248071). SENSOR FOR MEASURING A GAS PROPERTY simplified abstract
- Infineon Technologies AG patent applications on July 25th, 2024
- Intel corporation (20240105508). INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM simplified abstract
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract
- Intel corporation (20240105588). INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE simplified abstract
- Intel corporation (20240105589). INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES simplified abstract
- Intel corporation (20240105598). DIFFERENTIATED CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract
- Intel corporation (20240112951). INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS simplified abstract
- Intel corporation (20240112952). INTERCONNECT WIRES INCLUDING RELATIVELY LOW RESISTIVITY CORES simplified abstract
- Intel corporation (20240113017). PLUG IN A METAL LAYER simplified abstract
- Intel corporation (20240113019). SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240128162). NESTED ARCHITECTURES FOR ENHANCED HETEROGENEOUS INTEGRATION simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240203868). SERIAL DIRECTED SELF-ASSEMBLY (DSA) PROCESSES FOR FORMING METAL LAYER WITH CUT simplified abstract
- Intel corporation (20240203869). INTEGRATED CIRCUIT DEVICES WITH HYBRID METAL LINES simplified abstract
- Intel corporation (20240204083). DSA (DIRECTED SELF-ASSEMBLY) BASED SPACER AND LINER FOR SHORTING MARGIN OF VIA simplified abstract
- Intel corporation (20240213328). DIRECT ELECTROPLATING ON MODIFIED POLYMER-GRAPHENE COMPOSITES simplified abstract
- Intel corporation (20240219894). METHODS AND APPARATUS TO DETECT DEFECTS DURING SEMICONDUCTOR CHIP FABRICATION AND/OR TO DEBUG SEMICONDUCTOR CHIPS AFTER FABRICATION simplified abstract
- Intel corporation (20240222130). ENABLING COPPER RECESS FLATTENING THROUGH BLOCKED COPPER ETCHING PROCESSES simplified abstract
- Intel corporation (20240222136). ELECTRICAL LAYER WITH ROUGHENED SURFACES simplified abstract
- Intel corporation (20240222137). ENABLING COPPER RECESS FLATTENING THROUGH A DFR PATTERNING PROCESSES simplified abstract
- Intel corporation (20240222270). VIA FUSE WITH METAL-INSULATOR-METAL ARCHITECTURE AND IMPROVED ELECTRODE MATERIAL simplified abstract
- Intel corporation (20240243052). VERTICALLY SPACED INTRA-LEVEL INTERCONNECT LINE METALLIZATION FOR INTEGRATED CIRCUIT DEVICES simplified abstract
- Intel corporation (20240282624). CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS simplified abstract
- Intel corporation (20240282633). GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME simplified abstract
- Intel corporation (20240290651). SELF-ASSEMBLED GUIDED HOLE AND VIA PATTERNING OVER GRATING simplified abstract
- Intel corporation (20240290723). PROTECTION AGAINST ELECTROMIGRATION WITHIN A LAYER OF AN INTEGRATED CIRCUIT simplified abstract
- Intel corporation (20240304543). SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRCUITS simplified abstract
- Intel corporation (20240304549). MULTI-HEIGHT & MULTI-WIDTH INTERCONNECT LINE METALLIZATION FOR INTEGRATED CIRCUIT STRUCTURES simplified abstract
- Intel corporation (20240321685). SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS simplified abstract
- Intel corporation (20240332064). BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT ON A TRANSISTOR LAYER simplified abstract
- Intel corporation (20240332071). PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF DIELECTRIC MATERIAL UPON OXIDIZABLE MATERIAL simplified abstract
- Intel corporation (20240332077). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION simplified abstract
- Intel corporation (20240332112). CHIP-SCALE PACKAGE ARCHITECTURES CONTAINING A DIE BACK SIDE METAL AND A SOLDER THERMAL INTERFACE MATERIAL simplified abstract
- Intel corporation (20240332134). METHODS AND APPARATUS TO MITIGATE ELECTROMIGRATION IN INTEGRATED CIRCUIT PACKAGES simplified abstract
- Intel corporation (20240332166). INTEGRATED CIRCUIT STRUCTURES HAVING AIR GAPS simplified abstract
- Intel corporation (20240332389). PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON DEVICES simplified abstract
- Intel corporation (20240332399). GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240339381). AIR-GAP TRACES AND AIR-GAP EMBEDDED BRIDGE INTEGRATED IN GLASS INTERPOSER simplified abstract
- Intel corporation (20240347465). CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 25th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on August 22nd, 2024
- Intel Corporation patent applications on August 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on July 18th, 2024
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 27th, 2024
- Intel Corporation patent applications on June 6th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on May 16th, 2024
- Intel Corporation patent applications on May 30th, 2024
- Intel Corporation patent applications on October 10th, 2024
- Intel Corporation patent applications on October 17th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- Intel Corporation patent applications on September 12th, 2024
- Intel Corporation patent applications on September 26th, 2024
- International business machines corporation (20240096692). HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS simplified abstract
- International business machines corporation (20240096699). SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract
- International business machines corporation (20240096752). VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240096786). SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract
- International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
- International business machines corporation (20240096940). BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract
- International business machines corporation (20240105506). LOCAL LINE EXTENSION FOR ENLARGED VIA-TO-LINE CONTACT AREA simplified abstract
- International business machines corporation (20240105583). INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE simplified abstract
- International business machines corporation (20240105590). STACKED FET CONTACT FORMATION simplified abstract
- International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract
- International business machines corporation (20240105612). BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS simplified abstract
- International business machines corporation (20240105788). LOCAL INTERCONNECT AT BACKSIDE TO ENABLE FLEXIBLE ROUTING ACROSS DIFFERENT CELL simplified abstract
- International business machines corporation (20240113013). SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract
- International business machines corporation (20240113018). LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE simplified abstract
- International business machines corporation (20240113023). Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract
- International business machines corporation (20240113024). MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER simplified abstract
- International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
- International business machines corporation (20240113200). INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract
- International business machines corporation (20240128191). POWER DISTRIBUTION NETWORK WITH BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract
- International business machines corporation (20240136253). ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS simplified abstract
- International business machines corporation (20240136281). SELF-ALIGNED ZERO TRACK SKIP simplified abstract
- International business machines corporation (20240136288). Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract
- International business machines corporation (20240136289). VIRTUAL POWER SUPPLY THROUGH WAFER BACKSIDE simplified abstract
- International business machines corporation (20240162087). MANDREL-PULL-FIRST INTERCONNECT PATTERNING simplified abstract
- International business machines corporation (20240162139). METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract
- International business machines corporation (20240162152). AIRGAP SPACER FOR POWER VIA simplified abstract
- International business machines corporation (20240162229). STACKED FET WITH EXTREMELY SMALL CELL HEIGHT simplified abstract
- International business machines corporation (20240178127). ISOLATED SUPER VIA TO MIDDLE METAL LINE LEVEL simplified abstract
- International business machines corporation (20240178143). BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract
- International business machines corporation (20240186177). ASYMMETRIC SKIP-LEVEL VIA STRUCTURE simplified abstract
- International business machines corporation (20240186242). Wire Structure for Low Resistance Interconnects simplified abstract
- International business machines corporation (20240194528). BACKSIDE DIRECT CONTACT FORMATION simplified abstract
- International business machines corporation (20240194585). SUPER VIA WITH SIDEWALL SPACER simplified abstract
- International business machines corporation (20240194586). SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract
- International business machines corporation (20240194587). Interconnects with Sidewall Barrier Layer Divot Fill simplified abstract
- International business machines corporation (20240194670). ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract
- International business machines corporation (20240203792). SELF-ALIGNED BACKSIDE GATE CONTACTS simplified abstract
- International business machines corporation (20240203867). SKIP VIA WITH DISCONTINUOUS DIELECTRIC CAP simplified abstract
- International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract
- International business machines corporation (20240203878). ENLARGED SHALLOW TRENCH ISOLATION FOR BACKSIDE POWER simplified abstract
- International business machines corporation (20240203879). LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240204008). STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract