Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 818 total.
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- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444918. MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18451819. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18453483. SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18458489. TRANSISTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18459699. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18462728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18464839. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18467293. SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS simplified abstract (NEXPERIA B.V.)
- 18467961. SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING simplified abstract (Robert Bosch GmbH)
- 18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18472312. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18473412. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18475441. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18476571. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18476776. SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18477290. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18486493. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18487275. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18488741. FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18492343. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18493856. SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18494376. METHOD FOR FORMING VIA STRUCTURE WITH LOW RESISTIVITY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18494759. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18495220. FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract (Samsung Electronics Co., Ltd.)
- 18502225. SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES simplified abstract (MEDIATEK Inc.)
- 18502324. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18502352. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18502545. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18504027. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504745. CONTACT PLUGS AND METHODS FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18507905. TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18507957. SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
- 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510370. AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
- 18510506. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511604. NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18511711. EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18513439. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18514974. NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING simplified abstract (Intel Corporation)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18515908. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516215. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516373. HYBRID CONDUCTIVE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517400. INTEGRATED CIRCUIT FIN STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518004. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18518131. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518162. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518585. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518670. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18518716. METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518729. SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18518797. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519263. INTEGRATED CIRCUITS WITH GATE CUT FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519862. CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18520214. SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520326. SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520996. Source/Drain Metal Contact and Formation Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521140. Footing Removal in Cut-Metal Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521253. SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521459. SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18521509. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18521951. NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521975. SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522064. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522637. Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18522687. UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18523214. EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
- 18524195. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (DENSO CORPORATION)
- 18524195. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18525521. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526084. Low-K Gate Spacer and Methods for Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526317. FinFET Device and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526360. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526397. TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526422. SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526429. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526444. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526828. CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18527151. SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18529731. SELECT GATE TRANSISTOR WITH SEGMENTED CHANNEL FIN simplified abstract (Micron Technology, Inc.)
- 18531078. ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18531898. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18531922. ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18533262. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18533410. Integrated Assemblies and Semiconductor Memory Devices simplified abstract (Micron Technology, Inc.)
- 18535274. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18538012. METHOD FOR PREDICTING FAILURE OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 18543784. CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18543994. PCB LAND PAD FOR THREE-PIN MOSFET COMPONENT simplified abstract (Micron Technology, Inc.)
- 18545180. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18546168. VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT simplified abstract (Robert Bosch GmbH)
- 18554032. METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18557252. VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract (Robert Bosch GmbH)
- 18581096. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18581104. FINFET DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18581153. TRANSISTORS HAVING NANOSTRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18583411. THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584028. FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584282. SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18585422. NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18586735. METAL OXIDE INTERLAYER STRUCTURE FOR NFET AND PFET simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18588586. SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18590282. FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18593661. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)
- 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18598781. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18598793. SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18599522. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18599779. SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18602067. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18604195. Semiconductor Devices Including FINFET Structures with Increased Gate Surface simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18605714. BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18608197. METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE AND BUCK CONVERTER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18608294. SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract (Intel Corporation)
- 18609581. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18610318. SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
2
- 20240014255. METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUFACTURING METHOD THEREFOR simplified abstract (LG ELECTRONICS INC.)
- 20240014261. REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES simplified abstract (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 20240029972. SOLID STATE HIGH POWER BATTERY DISRUPTER simplified abstract (Joyson Safety Systems Acquisition LLC)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240030347. TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS simplified abstract (ETRON TECHNOLOGY, INC.)
- 20240047339. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
A
- Apple inc. (20240105617). Vertical Transistors With Backside Power Delivery simplified abstract
- Apple inc. (20240128929). Oscillator with Fin Field-Effect Transistor (FinFET) Resonator simplified abstract
- Apple Inc. patent applications on April 18th, 2024
- Apple Inc. patent applications on March 28th, 2024
B
- Blockchain patent applications on 22nd Mar 2024
- Blockchain patent applications on April 18th, 2024
- Blockchain patent applications on February 22nd, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on January 25th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 21st, 2024
- Blockchain patent applications on March 28th, 2024
- Blockchain patent applications on May 16th, 2024
H
I
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract
- Intel corporation (20240105802). INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUGREMOVED FROM TRENCH CONTACT simplified abstract
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract
- Intel corporation (20240128340). INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178226). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract
- Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract
- Intel corporation (20240186395). LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186416). TMD INVERTED NANOWIRE INTEGRATION simplified abstract
- Intel corporation (20240194673). INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES simplified abstract
- Intel corporation (20240204103). TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS simplified abstract
- Intel corporation (20240213331). GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240222440). TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract
- Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract
- Intel corporation (20240222509). SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract
- Intel corporation (20240224508). INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 25th, 2024