Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- 18531922. ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18533262. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18533354. TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (DENSO CORPORATION)
- 18533354. TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18533410. Integrated Assemblies and Semiconductor Memory Devices simplified abstract (Micron Technology, Inc.)
- 18535274. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18538012. METHOD FOR PREDICTING FAILURE OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18539610. NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18539610. NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 18543719. DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MANUFACTURING THE DIODE simplified abstract (DENSO CORPORATION)
- 18543719. DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MANUFACTURING THE DIODE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18543784. CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18543994. PCB LAND PAD FOR THREE-PIN MOSFET COMPONENT simplified abstract (Micron Technology, Inc.)
- 18545180. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18546168. VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT simplified abstract (Robert Bosch GmbH)
- 18546807. FERROELECTRIC FIELD-EFFECT TRANSISTOR WITH HIGH PERMITTIVITY INTERFACIAL LAYER simplified abstract (THE REGENTS OF THE UNIVERSITY OF CALIFORNIA)
- 18554032. METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18557210. METHOD FOR PRODUCING A VERTICAL POWER SEMICONDUCTOR COMPONENT, AND VERTICAL POWER SEMICONDUCTOR COMPONENT simplified abstract (Robert Bosch GmbH)
- 18557252. VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract (Robert Bosch GmbH)
- 18566092. SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18568006. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18581096. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18581104. FINFET DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18581153. TRANSISTORS HAVING NANOSTRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18581241. Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18583411. THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584028. FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584171. FERROELECTRIC FILM, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC COMPONENT simplified abstract (Murata Manufacturing Co., Ltd.)
- 18584282. SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18585422. NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18585978. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18586735. METAL OXIDE INTERLAYER STRUCTURE FOR NFET AND PFET simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18587381. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18587506. METHOD FOR FORMING DIFFERENT TYPES OF DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18588586. SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18590179. METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18590282. FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18592697. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18593661. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18594463. EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION METHODS THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18594735. INTEGRATED CIRCUIT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18595033. Fill Structures With Air Gaps simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18595429. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18595629. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18596123. MECHANISMS FOR GROWING EPITAXY STRUCTURE OF FINFET DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18596305. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM Co., LTD.)
- 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)
- 18596794. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18596794. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18597813. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18597952. METHODS OF FORMING FINFET DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18598672. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18598781. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18598793. SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18599522. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18599779. SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18602067. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18603270. SEMICONDUCTOR DIE WITH A VERTICAL DEVICE simplified abstract (Infineon Technologies Austria AG)
- 18603723. POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (HYUNDAI MOBIS CO., LTD.)
- 18604195. Semiconductor Devices Including FINFET Structures with Increased Gate Surface simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18605714. BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18606436. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18607547. VERTICAL TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18607746. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (ROHM CO., LTD.)
- 18608149. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18608197. METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE AND BUCK CONVERTER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18608294. SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract (Intel Corporation)
- 18608949. Semiconductor structure simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18609404. TRI-GATE TRANSISTOR AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18609539. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18609581. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18609645. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18610267. REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18610288. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18610318. SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18611143. WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM simplified abstract (ROHM CO., LTD.)
- 18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18612228. INTER BLOCK FOR RECESSED CONTACTS AND METHODS FORMING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18612701. SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18614290. STACKED FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)
- 18614483. SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND VEHICLE simplified abstract (ROHM CO., LTD.)
- 18615049. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18615255. SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18615490. MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18616449. SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18616832. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN STRUCTURE HAVING MODIFIED SHAPE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18619633. Selective Formation Of Titanium Silicide And Titanium Nitride By Hydrogen Gas Control simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18622018. ISOLATION STRUCTURES FOR TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18622142. EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18622230. METAL GATE STRUCTURES AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18622615. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS simplified abstract (Intel Corporation)
- 18622659. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES simplified abstract (Intel Corporation)
- 18623285. Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18624386. Isolation Structures Of Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18625651. REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18625798. SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18627635. SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18628112. AIR SPACERS FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18631842. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18635641. ASYMMETRIC EPITAXY REGIONS FOR LANDING CONTACT PLUG simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18636490. Source/Drain Device and Method of Forming Thereof simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18637874. SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18638120. Semiconductor Devices Having Funnel-Shaped Gate Structures simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18638134. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18639948. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18647260. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18648069. METHODS OF REDUCING CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18648180. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18649713. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18649986. SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract (Micron Technology, Inc.)
- 18650144. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18650218. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18650665. Gate Contact And Via Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18650982. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18651184. MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS simplified abstract (Sony Group Corporation)
- 18652013. SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME simplified abstract (ROHM Co., LTD.)
- 18653289. Integrated Assemblies having Transistors Configured for High-Voltage Applications, and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18653928. SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18654298. NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18654431. Power Transistor IC with Thermopile simplified abstract (Texas Instruments Incorporated)
- 18656852. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18656884. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18657175. METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18658521. AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18658794. SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYER BETWEEN ACTIVE REGION AND SEMICONDUCTOR LAYER AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18661694. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18662437. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18662615. METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18663327. SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18665005. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18665572. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18666465. SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18666498. Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract (Micron Technology, Inc.)
- 18667032. TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18667347. TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18668085. LATERALLY DIFFUSED MOSFET AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669059. ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18669156. RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18669565. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18669624. FinFET Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669766. SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (DENSO CORPORATION)
- 18670123. SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18670199. SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18670223. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18670557. SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671151. SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO SECOND CAVITY OF SEMICONDUCTOR FIN simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671164. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671732. Contact Structures With Deposited Silicide Layers simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671941. WORK FUNCTION METAL GATE DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18673615. FIN FIELD-EFFECT TRANSISTOR DEVICE HAVING HYBRID WORK FUNCTION LAYER STACK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18673632. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18674507. TRANSISTOR DEVICE HAVING A SOURCE REGION SEGMENTS AND BODY REGION SEGMENTS simplified abstract (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 18674589. INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18674634. LINER FOR A BI-LAYER GATE HELMET AND THE FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18674989. SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18675030. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18678213. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18678227. GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18678538. Semiconductor Device simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18678963. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18679408. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18681214. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18731465. DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18731590. BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18731593. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18731945. REDUCING PATTERN LOADING IN THE ETCH-BACK OF METAL GATE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18732028. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18732351. SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSION CIRCUIT, AND VEHICLE simplified abstract (Huawei Digital Power Technologies Co., Ltd.)
- 18733342. Display Device and Display Driving Method simplified abstract (LG Display Co., Ltd.)
- 18734613. SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS OF THE SAME simplified abstract (ROHM CO., LTD.)
- 18734635. STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18734638. GATE STACK TREATMENT FOR FERROELECTRIC TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18736560. HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER simplified abstract (United Microelectronics Corp.)
2
- 20240014255. METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUFACTURING METHOD THEREFOR simplified abstract (LG ELECTRONICS INC.)
- 20240014261. REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES simplified abstract (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 20240029972. SOLID STATE HIGH POWER BATTERY DISRUPTER simplified abstract (Joyson Safety Systems Acquisition LLC)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240030347. TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS simplified abstract (ETRON TECHNOLOGY, INC.)
- 20240047339. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
A
- Apple inc. (20240105617). Vertical Transistors With Backside Power Delivery simplified abstract
- Apple inc. (20240128929). Oscillator with Fin Field-Effect Transistor (FinFET) Resonator simplified abstract
- Apple Inc. patent applications on April 18th, 2024
- Apple Inc. patent applications on March 28th, 2024
- Applied materials, inc. (20240268095). 4F2 DRAM Including Buried Bitline simplified abstract
- Applied materials, inc. (20240282813). SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT simplified abstract
- Applied Materials, Inc. patent applications on August 22nd, 2024
- Applied Materials, Inc. patent applications on August 8th, 2024