Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
(previous page) (next page)1
- 18093877. INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18096663. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097255. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)
- 18099405. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18100302. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18105164. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18105164. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18105887. SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18105955. METHOD FOR FORMING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18107516. HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18107990. Semiconductor Device and Fabricating Method Thereof simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18108019. EDMOS AND FABRICATING METHOD OF THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18110488. POWER MANAGEMENT INTEGRATED CIRCUIT AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18111995. DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION simplified abstract (GlobalFoundries U.S. Inc.)
- 18112213. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18112213. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18112312. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18113445. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18113445. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18120704. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18120704. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18120845. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18134555. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18138728. POWER METAL-OXIDE-SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (United Microelectronics Corp.)
- 18139060. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18141060. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18143314. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18145059. VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (International Business Machines Corporation)
- 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)
- 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149495. FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149734. VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18150809. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151624. Integrated Circuits With Contacting Gate Structures simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155392. Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155887. SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157352. Method and Structure for FinFET Isolation simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157416. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE simplified abstract (Samsung Electronics Co., Ltd.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157939. SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE simplified abstract (GlobalFoundries U.S. Inc.)
- 18160002. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18160002. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18163400. CONTACT STRUCTURE WITH ARCHED TOP SURFACE AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18166126. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18168243. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18168243. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18170482. FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18171119. SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT simplified abstract (Applied Materials, Inc.)
- 18171362. LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171528. NONLINEAR CHANNEL simplified abstract (International Business Machines Corporation)
- 18171765. SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL POROUS REGION simplified abstract (GlobalFoundries U.S. Inc.)
- 18172027. FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL simplified abstract (GlobalFoundries U.S. Inc.)
- 18177210. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177245. SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177313. SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177324. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177409. Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18178248. TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/DRAIN SPACES simplified abstract (QUALCOMM Incorporated)
- 18178522. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18179294. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18179294. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18180588. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Winbond Electronics Corp.)
- 18182426. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18184085. Vertical Transistors Occupying Reduced Chip Area and the Methods Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185285. Low Leakage Replacement Metal Gate FET simplified abstract (Murata Manufacturing Co., Ltd.)
- 18185611. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185941. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18187989. INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18187990. LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (Intel Corporation)
- 18188042. STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188314. Crystallization of High-K Dielectric Layer simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18188964. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18192683. POWER MOSFET AND MANUFACTURING METHOD THEREOF simplified abstract (United Microelectronics Corp.)
- 18199504. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18208943. FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18220971. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18228231. SEMICONDUCTOR DEVICE INCLUDING 3D-STACKED FIELD-EFFECT TRANSISTORS HAVING ISOLATION STRUCTURE BETWEEN CONTACT PLUGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18232640. MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18234290. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18234290. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18235000. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18236056. Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18236925. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)
- 18243726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18244741. SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC APPLICATIONS simplified abstract (Intel Corporation)
- 18250580. VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18255760. VERTICAL POWER TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18279220. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Mitsubishi Electric Corporation)
- 18287650. SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract (Mitsubishi Electric Corporation)
- 18315232. N-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18316146. P-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18323006. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18323006. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18323427. SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract (SK hynix Inc.)
- 18323587. SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18328432. Gate Dielectric for Gate Leakage Reduction simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18334099. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18338869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18345070. TRANSISTOR CONTACTS AND METHODS OF FORMING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18350433. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18350747. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18351407. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18357307. Parasitic Capacitance Reduction simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18358544. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18358544. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18361030. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18364860. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18364860. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18368243. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18370120. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18371328. Semiconductor Devices Including Resistor Structures simplified abstract (Samsung Electronics Co., Ltd.)
- 18372325. INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378710. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18382664. POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (HYUNDAI MOBIS CO., LTD.)
- 18383370. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 18390360. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
- 18392870. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18394347. VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE simplified abstract (Robert Bosch GmbH)
- 18395058. INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18396174. INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract (Intel Corporation)
- 18396258. ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18397476. SEMICONDUCTOR DEVICES WITH THERMOELECTRIC COOLER simplified abstract (Texas Instruments Incorporated)
- 18399996. METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18401780. Ion Implantation For Nano-FET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402018. FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402563. METHOD OF BREAKING THROUGH ETCH STOP LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402859. Barrier-Free Approach for Forming Contact Plugs simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402974. VERTICAL SEMICONDUCTOR COMPONENT, IN PARTICULAR VERTICAL TRANSISTOR, WITH MINIMIZED SOURCE-DRAIN LEAKAGE CURRENTS simplified abstract (Robert Bosch GmbH)
- 18403076. HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403080. FIELD-EFFECT TRANSISTOR, AND METHOD OF PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18403990. METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18405040. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)
- 18405736. SEMICONDUCTOR DEVICE AND STACK OF SEMICONDUCTOR CHIPS simplified abstract (Samsung Electronics Co., Ltd.)
- 18410016. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18410360. ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A PROTECTION CIRCUIT simplified abstract (Infineon Technologies Austria AG)
- 18413716. Fin Field-Effect Transistor Device with Composite Liner for the Fin simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18414811. AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract (Samsung Electronics Co., Ltd.)
- 18415765. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18419973. FIELD EFFECT TRANSISTOR simplified abstract (DENSO CORPORATION)
- 18419973. FIELD EFFECT TRANSISTOR simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18420171. FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18420777. SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18420969. SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18421001. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18421121. SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18421356. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18421356. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18421602. TEMPERATURE MONITORING DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18423738. INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18424704. MICROELECTRONIC DEVICES INCLUDING CONTACT STRUCTURES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18425797. SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18426010. DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18426507. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18427508. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18431693. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
- 18431921. DIPOLES IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433217. INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18434028. SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18434077. VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435425. SEMICONDUCTOR DEVICE simplified abstract (Renesas Electronics Corporation)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18436052. SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18436812. SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18437961. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract (Intel Corporation)
- 18438575. FORMING METAL CONTACTS ON METAL GATES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18438758. FINFET Devices with Backside Power Rail and Backside Self-Aligned Via simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18439831. SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRONIC APPARATUS simplified abstract (CANON KABUSHIKI KAISHA)
- 18439859. METHOD FOR FORMING LONG CHANNEL BACK-SIDE POWER RAIL DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18442104. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18442381. HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18443297. SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18443917. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18443994. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444849. SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444918. MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)