Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 64 pages are in this category, out of 1,354 total.
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- 17383423. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383435. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)
- 17453874. SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17459855. GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461714. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463123. CHANNEL STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17520812. Area Scaling for VTFET Contacts simplified abstract (International Business Machines Corporation)
- 17521083. Single Process Double Gate and Variable Threshold Voltage MOSFET simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17542377. GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551428. LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551686. SELF-ALIGNED GATE CONTACT FOR VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551950. VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17585932. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586310. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586705. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17592995. Fin Field-Effect Transistor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17643553. MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644100. SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644528. CROSS BAR VERTICAL FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17648037. Dummy Hybrid Film for Self-Alignment Contact Formation simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17651721. TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17697400. VERTICAL CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17703329. Transistor Gate Structures and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17712726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17716460. SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 17717268. SEMICONDUCTOR DEVICE INCLUDING AIR GAP simplified abstract (Samsung Electronics Co., Ltd.)
- 17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17766319. VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME simplified abstract (Robert Bosch GmbH)
- 17808566. COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809099. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17809329. DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS simplified abstract (Intel Corporation)
- 17819936. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17823507. FINFET WITH LONG CHANNEL LENGTH STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17831513. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834240. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834694. SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17835988. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836628. FIN PROFILE MODULATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847625. SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17847787. METHOD FOR FORMING DUAL SILICIDE IN MANUFACTURING PROCESS OF SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848605. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849424. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849608. FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17866966. MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)