Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- Robert bosch gmbh (20240322033). VERTICAL POWER TRANSISTOR simplified abstract
- Robert Bosch GmbH patent applications on April 25th, 2024
- Robert Bosch GmbH patent applications on February 15th, 2024
- Robert Bosch GmbH patent applications on January 18th, 2024
- Robert Bosch GmbH patent applications on July 18th, 2024
- Robert Bosch GmbH patent applications on June 27th, 2024
- Robert Bosch GmbH patent applications on September 26th, 2024
- Rohm co., ltd. (20240282738). SEMICONDUCTOR DEVICE simplified abstract
- Rohm co., ltd. (20240282851). SEMICONDUCTOR DEVICE simplified abstract
- ROHM CO., LTD. patent applications on August 22nd, 2024
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- Samsung electronics co., ltd. (20240096894). SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240098984). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105842). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128268). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136290). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162293). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162307). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240162346). FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract
- Samsung electronics co., ltd. (20240164081). SEMICONDUCTOR DEVICE AND STACK OF SEMICONDUCTOR CHIPS simplified abstract
- Samsung electronics co., ltd. (20240164108). THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240178307). SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240186321). SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER simplified abstract
- Samsung electronics co., ltd. (20240186409). INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract
- Samsung electronics co., ltd. (20240194752). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240194761). ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194768). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194786). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240196623). ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240196624). METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract
- Samsung electronics co., ltd. (20240204050). SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract
- Samsung electronics co., ltd. (20240206188). FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract
- Samsung electronics co., ltd. (20240213317). SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract
- Samsung electronics co., ltd. (20240213342). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240213349). ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240222524). TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240224487). Semiconductor Devices Including FINFET Structures with Increased Gate Surface simplified abstract
- Samsung electronics co., ltd. (20240234319). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240242965). AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract
- Samsung electronics co., ltd. (20240243038). INTEGRATED CIRCUIT INCLUDING BACK-SIDE WIRING AND A METHOD OF DESIGNING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240243171). SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240244847). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240250144). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240250169). SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN simplified abstract
- Samsung electronics co., ltd. (20240250186). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240258430). SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240260274). MEMORY DEVICE IMPLEMENTING MULTI-BIT AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240266287). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240266394). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240268098). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240274540). INTEGRATED CIRCUIT CHIP INCLUDING GATE ELECTRODE WITH OBLIQUE CUT SURFACE, AND MANUFACTURING METHOD OF THE SAME simplified abstract
- Samsung electronics co., ltd. (20240274714). INTEGRATED CIRCUIT INCLUDING TRANSISTORS AND A METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240276712). SEMICONDUCTOR DEVICE INCLUDING VERTICAL ACTIVE PILLAR simplified abstract
- Samsung electronics co., ltd. (20240282763). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240290692). IINTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT simplified abstract
- Samsung electronics co., ltd. (20240290833). SEMICONDUCTOR DEVICE HAVING DEVICE ISOLATION LAYERS simplified abstract
- Samsung electronics co., ltd. (20240290855). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240290888). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240297215). SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYER BETWEEN ACTIVE REGION AND SEMICONDUCTOR LAYER AND METHOD OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240304704). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240306400). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240315030). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240322039). INTEGRATED CIRCUIT DEVICES simplified abstract
- Samsung electronics co., ltd. (20240322043). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324165). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240324188). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240324237). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240332381). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240332424). SEMICONDUCTOR DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 6th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 6th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 30th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 5th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 5th, 2024
- Semiconductor energy laboratory co., ltd. (20240258433). SEMICONDUCTOR DEVICE simplified abstract
- Semiconductor energy laboratory co., ltd. (20240266444). SEMICONDUCTOR DEVICE simplified abstract
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on August 1st, 2024
- Semiconductor Energy Laboratory Co., Ltd. patent applications on August 8th, 2024
- Sk hynix inc. (20240162324). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240162348). SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract
- SK hynix Inc. patent applications on January 18th, 2024
- SK hynix Inc. patent applications on May 16th, 2024
- Sony group corporation (20240266379). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS simplified abstract
- Sony group corporation (20240322037). MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS simplified abstract
- SONY GROUP CORPORATION patent applications on August 8th, 2024
- Sony Group Corporation patent applications on September 26th, 2024
- Sumitomo electric industries, ltd. (20240282824). SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Sumitomo Electric Industries, Ltd. patent applications on August 22nd, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240096630). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096643). SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096697). CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096707). Footing Removal in Cut-Metal Process simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096882). NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096884). METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096885). SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096892). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096895). UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096897). TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096942). SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096943). REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096961). Source/Drain Metal Contact and Formation Thereof simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096986). METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096998). HYBRID CONDUCTIVE STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096999). SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097007). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097009). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097011). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097027). SEMICONDUCTOR STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097035). EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097036). FinFET Device and Method of Forming Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097039). Crystallization of High-K Dielectric Layer simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128375). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128376). METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240159599). TEMPERATURE MONITORING DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162094). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162347). INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162349). GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186179). Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186185). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186189). INTEGRATED CIRCUIT DEVICE WITH LOW THRESHOLD VOLTAGE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186320). RECESSED GATE FOR AN MV DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186326). SEMICONDUCTOR DEVICE INCLUDING STANDARD CELLS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186390). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186412). High Voltage Transistor Structure simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186414). FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186415). Semiconductor Device and Methods of Forming Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186417). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194559). THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194674). SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194675). SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194749). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194753). FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194762). METAL OXIDE INTERLAYER STRUCTURE FOR NFET AND PFET simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194764). MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194766). SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194767). DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194784). SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194785). FINFET DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194787). TRANSISTORS HAVING NANOSTRUCTURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194788). NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222456). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222458). SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222507). SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222508). FINFET Devices with Backside Power Rail and Backside Self-Aligned Via simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240223087). METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE AND BUCK CONVERTER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224538). BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249943). N-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249944). REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249948). Selective Formation Of Titanium Silicide And Titanium Nitride By Hydrogen Gas Control simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249979). SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249981). INTEGRATED CIRCUIT STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250086). P-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250116). HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250121). Fill Structures With Air Gaps simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250122). Isolation Structures Of Semiconductor Devices simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250124). SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250125). SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250139). FORMING METAL CONTACTS ON METAL GATES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250142). Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract