Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract
- Micron technology, inc. (20240233797). MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
- Micron technology, inc. (20240234311). REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
- Micron technology, inc. (20240282620). SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract
- Micron technology, inc. (20240282856). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240282858). Integrated Assemblies having Transistors Configured for High-Voltage Applications, and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20240304722). MICROELECTRONIC DEVICES INCLUDING CONTACT STRUCTURES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240306399). Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on September 12th, 2024
- Mitsubishi electric corporation (20240136399). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
- Mitsubishi electric corporation (20240136439). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Mitsubishi electric corporation (20240234504). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
- Mitsubishi electric corporation (20240234570). SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Mitsubishi electric corporation (20240234575). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Mitsubishi electric corporation (20240250165). SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Mitsubishi electric corporation (20240297229). SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract
- Mitsubishi Electric Corporation patent applications on April 25th, 2024
- Mitsubishi Electric Corporation patent applications on July 11th, 2024
- Mitsubishi Electric Corporation patent applications on July 25th, 2024
- Mitsubishi Electric Corporation patent applications on September 5th, 2024
- Murata manufacturing co., ltd. (20240250145). FERROELECTRIC FILM, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC COMPONENT simplified abstract
- Murata manufacturing co., ltd. (20240313081). Low Leakage Replacement Metal Gate FET simplified abstract
- Murata Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Murata Manufacturing Co., Ltd. patent applications on September 19th, 2024
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- Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract
- Qualcomm incorporated (20240136357). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240234418). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240297218). TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/DRAIN SPACES simplified abstract
- QUALCOMM Incorporated patent applications on April 25th, 2024
- QUALCOMM Incorporated patent applications on July 11th, 2024
- QUALCOMM Incorporated patent applications on March 21st, 2024
- QUALCOMM Incorporated patent applications on March 28th, 2024
- QUALCOMM Incorporated patent applications on September 5th, 2024
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- Robert bosch gmbh (20240136236). VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT simplified abstract
- Robert bosch gmbh (20240136435). FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION simplified abstract
- Robert bosch gmbh (20240213366). VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract
- Robert bosch gmbh (20240243170). MEMBRANE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME simplified abstract
- Robert bosch gmbh (20240322033). VERTICAL POWER TRANSISTOR simplified abstract
- Robert Bosch GmbH patent applications on April 25th, 2024
- Robert Bosch GmbH patent applications on February 15th, 2024
- Robert Bosch GmbH patent applications on January 18th, 2024
- Robert Bosch GmbH patent applications on July 18th, 2024
- Robert Bosch GmbH patent applications on June 27th, 2024
- Robert Bosch GmbH patent applications on September 26th, 2024
- Rohm co., ltd. (20240282738). SEMICONDUCTOR DEVICE simplified abstract
- Rohm co., ltd. (20240282851). SEMICONDUCTOR DEVICE simplified abstract
- ROHM CO., LTD. patent applications on August 22nd, 2024
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- Samsung electronics co., ltd. (20240096894). SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240098984). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105842). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128268). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136290). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162293). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162307). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240162346). FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract
- Samsung electronics co., ltd. (20240164081). SEMICONDUCTOR DEVICE AND STACK OF SEMICONDUCTOR CHIPS simplified abstract
- Samsung electronics co., ltd. (20240164108). THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240178307). SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240186321). SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER simplified abstract
- Samsung electronics co., ltd. (20240186409). INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract
- Samsung electronics co., ltd. (20240194752). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240194761). ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194768). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240194786). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240196623). ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240196624). METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract
- Samsung electronics co., ltd. (20240204050). SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract
- Samsung electronics co., ltd. (20240206188). FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract
- Samsung electronics co., ltd. (20240213317). SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract
- Samsung electronics co., ltd. (20240213342). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240213349). ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240222524). TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240224487). Semiconductor Devices Including FINFET Structures with Increased Gate Surface simplified abstract
- Samsung electronics co., ltd. (20240234319). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240242965). AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract
- Samsung electronics co., ltd. (20240243038). INTEGRATED CIRCUIT INCLUDING BACK-SIDE WIRING AND A METHOD OF DESIGNING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240243171). SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240244847). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240250144). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240250169). SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN simplified abstract
- Samsung electronics co., ltd. (20240250186). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240258430). SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240260274). MEMORY DEVICE IMPLEMENTING MULTI-BIT AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240266287). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240266394). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240268098). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240274540). INTEGRATED CIRCUIT CHIP INCLUDING GATE ELECTRODE WITH OBLIQUE CUT SURFACE, AND MANUFACTURING METHOD OF THE SAME simplified abstract
- Samsung electronics co., ltd. (20240274714). INTEGRATED CIRCUIT INCLUDING TRANSISTORS AND A METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240276712). SEMICONDUCTOR DEVICE INCLUDING VERTICAL ACTIVE PILLAR simplified abstract
- Samsung electronics co., ltd. (20240282763). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240290692). IINTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT simplified abstract
- Samsung electronics co., ltd. (20240290833). SEMICONDUCTOR DEVICE HAVING DEVICE ISOLATION LAYERS simplified abstract
- Samsung electronics co., ltd. (20240290855). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240290888). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240297215). SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYER BETWEEN ACTIVE REGION AND SEMICONDUCTOR LAYER AND METHOD OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240304704). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240306400). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240315030). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240322039). INTEGRATED CIRCUIT DEVICES simplified abstract
- Samsung electronics co., ltd. (20240322043). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324165). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240324188). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240324237). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240332381). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240332424). SEMICONDUCTOR DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 6th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 6th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 30th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 5th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on September 5th, 2024
- Semiconductor energy laboratory co., ltd. (20240258433). SEMICONDUCTOR DEVICE simplified abstract
- Semiconductor energy laboratory co., ltd. (20240266444). SEMICONDUCTOR DEVICE simplified abstract
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on August 1st, 2024
- Semiconductor Energy Laboratory Co., Ltd. patent applications on August 8th, 2024
- Sk hynix inc. (20240162324). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240162348). SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract
- SK hynix Inc. patent applications on January 18th, 2024
- SK hynix Inc. patent applications on May 16th, 2024
- Sony group corporation (20240266379). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS simplified abstract
- Sony group corporation (20240322037). MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS simplified abstract
- SONY GROUP CORPORATION patent applications on August 8th, 2024
- Sony Group Corporation patent applications on September 26th, 2024
- Sumitomo electric industries, ltd. (20240282824). SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Sumitomo Electric Industries, Ltd. patent applications on August 22nd, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240096630). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096643). SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096697). CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096707). Footing Removal in Cut-Metal Process simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096882). NANOSTRUCTURE WITH VARIOUS WIDTHS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096884). METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096885). SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096892). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096895). UNIFORM GATE WIDTH FOR NANOSTRUCTURE DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096897). TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096942). SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096943). REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096961). Source/Drain Metal Contact and Formation Thereof simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096986). METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096998). HYBRID CONDUCTIVE STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096999). SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097007). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097009). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097011). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097027). SEMICONDUCTOR STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097035). EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097036). FinFET Device and Method of Forming Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097039). Crystallization of High-K Dielectric Layer simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128375). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract