Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- 18731590. BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18731593. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18731945. REDUCING PATTERN LOADING IN THE ETCH-BACK OF METAL GATE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18732028. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18732351. SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSION CIRCUIT, AND VEHICLE simplified abstract (Huawei Digital Power Technologies Co., Ltd.)
- 18733342. Display Device and Display Driving Method simplified abstract (LG Display Co., Ltd.)
- 18734613. SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS OF THE SAME simplified abstract (ROHM CO., LTD.)
- 18734635. STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18734638. GATE STACK TREATMENT FOR FERROELECTRIC TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18736560. HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER simplified abstract (United Microelectronics Corp.)
2
- 20240014255. METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUFACTURING METHOD THEREFOR simplified abstract (LG ELECTRONICS INC.)
- 20240014261. REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES simplified abstract (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 20240029972. SOLID STATE HIGH POWER BATTERY DISRUPTER simplified abstract (Joyson Safety Systems Acquisition LLC)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240030347. TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING GATE AND DRAIN/SOURCE REGIONS simplified abstract (ETRON TECHNOLOGY, INC.)
- 20240047339. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
A
- Apple inc. (20240105617). Vertical Transistors With Backside Power Delivery simplified abstract
- Apple inc. (20240128929). Oscillator with Fin Field-Effect Transistor (FinFET) Resonator simplified abstract
- Apple Inc. patent applications on April 18th, 2024
- Apple Inc. patent applications on March 28th, 2024
- Applied materials, inc. (20240268095). 4F2 DRAM Including Buried Bitline simplified abstract
- Applied materials, inc. (20240282813). SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT simplified abstract
- Applied Materials, Inc. patent applications on August 22nd, 2024
- Applied Materials, Inc. patent applications on August 8th, 2024
B
- Blockchain patent applications on 22nd Mar 2024
- Blockchain patent applications on April 18th, 2024
- Blockchain patent applications on February 22nd, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on January 25th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 21st, 2024
- Blockchain patent applications on March 28th, 2024
- Blockchain patent applications on May 16th, 2024
C
D
- Denso corporation (20240243199). SEMICONDUCTOR DEVICE simplified abstract
- Denso corporation (20240250128). SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Denso corporation (20240250164). DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MANUFACTURING THE DIODE simplified abstract
- Denso corporation (20240250166). TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Denso corporation (20240258425). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Denso corporation (20240282849). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract
- Denso corporation (20240297212). SEMICONDUCTOR DEVICE simplified abstract
- Denso corporation (20240321951). FIELD EFFECT TRANSISTOR simplified abstract
- DENSO CORPORATION patent applications on August 1st, 2024
- DENSO CORPORATION patent applications on August 22nd, 2024
- DENSO CORPORATION patent applications on July 18th, 2024
- DENSO CORPORATION patent applications on July 25th, 2024
- DENSO CORPORATION patent applications on September 26th, 2024
- DENSO CORPORATION patent applications on September 5th, 2024
H
I
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract
- Intel corporation (20240105802). INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUGREMOVED FROM TRENCH CONTACT simplified abstract
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract
- Intel corporation (20240128340). INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178226). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract
- Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract
- Intel corporation (20240186395). LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186416). TMD INVERTED NANOWIRE INTEGRATION simplified abstract
- Intel corporation (20240194673). INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES simplified abstract
- Intel corporation (20240204103). TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS simplified abstract
- Intel corporation (20240213331). GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240222440). TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract
- Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract
- Intel corporation (20240222509). SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract
- Intel corporation (20240224508). INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA simplified abstract
- Intel corporation (20240234422). STACKED FORKSHEET TRANSISTORS simplified abstract
- Intel corporation (20240243202). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS simplified abstract
- Intel corporation (20240243203). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES simplified abstract
- Intel corporation (20240258427). SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES simplified abstract
- Intel corporation (20240266353). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CHANNEL STRUCTURES USING BOTTOM-UP APPROACH simplified abstract
- Intel corporation (20240274718). FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM simplified abstract
- Intel corporation (20240290789). TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SINGLE DIE simplified abstract
- Intel corporation (20240321987). LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract
- Intel corporation (20240332175). BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE simplified abstract
- Intel corporation (20240332301). INTEGRATED CIRCUIT STRUCTURES WITH SUB-FIN ISOLATION simplified abstract
- Intel corporation (20240332302). INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA simplified abstract
- Intel corporation (20240332392). INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL simplified abstract
- Intel corporation (20240332399). GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240334669). BURIED LOW-K DIELECTRIC TO PROTECT SOURCE/DRAIN TO GATE CONNECTION simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on August 15th, 2024
- Intel Corporation patent applications on August 1st, 2024
- Intel Corporation patent applications on August 29th, 2024
- Intel Corporation patent applications on August 8th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on July 11th, 2024
- Intel Corporation patent applications on July 18th, 2024
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 27th, 2024
- Intel Corporation patent applications on June 6th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on May 16th, 2024
- Intel Corporation patent applications on May 30th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- Intel Corporation patent applications on September 26th, 2024
- International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract
- International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract
- International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract
- International business machines corporation (20240113021). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract
- International business machines corporation (20240186375). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240186376). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract
- International business machines corporation (20240203993). LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract
- International business machines corporation (20240204042). DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract
- International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract
- International business machines corporation (20240213244). VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract
- International business machines corporation (20240282860). NONLINEAR CHANNEL simplified abstract
- International business machines corporation (20240321879). STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on August 22nd, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- International Business Machines Corporation patent applications on January 18th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 26th, 2024
K
- Kabushiki kaisha toshiba (20240096938). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- Kabushiki kaisha toshiba (20240096962). SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240096966). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096972). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096973). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096974). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240097020). SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- Kabushiki kaisha toshiba (20240097021). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Kabushiki kaisha toshiba (20240097022). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract
- Kabushiki kaisha toshiba (20240097023). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Kabushiki kaisha toshiba (20240097024). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240297213). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
- Kabushiki kaisha toshiba (20240297220). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
- Kabushiki kaisha toshiba (20240313045). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313055). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313083). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
- Kabushiki kaisha toshiba (20240313104). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313106). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313107). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313108). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313109). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313110). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321697). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321862). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321955). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240321967). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321968). SEMICONDUCTOR DEVICE simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 5th, 2024
- Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
M
- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract
- Micron technology, inc. (20240233797). MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
- Micron technology, inc. (20240234311). REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
- Micron technology, inc. (20240282620). SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract
- Micron technology, inc. (20240282856). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240282858). Integrated Assemblies having Transistors Configured for High-Voltage Applications, and Methods of Forming Integrated Assemblies simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20240304722). MICROELECTRONIC DEVICES INCLUDING CONTACT STRUCTURES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240306399). Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024