Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- 18236925. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)
- 18243726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18244741. SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC APPLICATIONS simplified abstract (Intel Corporation)
- 18250580. VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18255760. VERTICAL POWER TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18279220. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Mitsubishi Electric Corporation)
- 18287650. SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract (Mitsubishi Electric Corporation)
- 18315232. N-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18316146. P-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18323006. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18323006. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18323427. SEMICONDUCTOR DEVICE HAVING A LOW-K GATE SIDE INSULATING LAYER simplified abstract (SK hynix Inc.)
- 18323587. SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18328432. Gate Dielectric for Gate Leakage Reduction simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18334099. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18338869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18345070. TRANSISTOR CONTACTS AND METHODS OF FORMING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18350433. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18350747. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18351407. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18357307. Parasitic Capacitance Reduction simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18358544. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18358544. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18361030. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18364860. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18364860. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18368243. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18370120. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18371328. Semiconductor Devices Including Resistor Structures simplified abstract (Samsung Electronics Co., Ltd.)
- 18372325. INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378710. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18382664. POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (HYUNDAI MOBIS CO., LTD.)
- 18383370. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 18390360. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
- 18392870. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18394347. VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE simplified abstract (Robert Bosch GmbH)
- 18395058. INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18396174. INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract (Intel Corporation)
- 18396258. ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18397476. SEMICONDUCTOR DEVICES WITH THERMOELECTRIC COOLER simplified abstract (Texas Instruments Incorporated)
- 18399996. METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18401780. Ion Implantation For Nano-FET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402018. FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402563. METHOD OF BREAKING THROUGH ETCH STOP LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402859. Barrier-Free Approach for Forming Contact Plugs simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402974. VERTICAL SEMICONDUCTOR COMPONENT, IN PARTICULAR VERTICAL TRANSISTOR, WITH MINIMIZED SOURCE-DRAIN LEAKAGE CURRENTS simplified abstract (Robert Bosch GmbH)
- 18403076. HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403080. FIELD-EFFECT TRANSISTOR, AND METHOD OF PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18403990. METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18405040. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)
- 18405736. SEMICONDUCTOR DEVICE AND STACK OF SEMICONDUCTOR CHIPS simplified abstract (Samsung Electronics Co., Ltd.)
- 18410016. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18410360. ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A PROTECTION CIRCUIT simplified abstract (Infineon Technologies Austria AG)
- 18413716. Fin Field-Effect Transistor Device with Composite Liner for the Fin simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18414811. AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract (Samsung Electronics Co., Ltd.)
- 18415765. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18419973. FIELD EFFECT TRANSISTOR simplified abstract (DENSO CORPORATION)
- 18419973. FIELD EFFECT TRANSISTOR simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18420171. FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18420777. SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18420969. SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18421001. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18421121. SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18421356. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18421356. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18421602. TEMPERATURE MONITORING DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18423738. INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18424704. MICROELECTRONIC DEVICES INCLUDING CONTACT STRUCTURES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18425797. SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18426010. DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18426507. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18427508. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18431693. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
- 18431921. DIPOLES IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433217. INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18434028. SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18434077. VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435425. SEMICONDUCTOR DEVICE simplified abstract (Renesas Electronics Corporation)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18436052. SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18436812. SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18437961. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract (Intel Corporation)
- 18438575. FORMING METAL CONTACTS ON METAL GATES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18438758. FINFET Devices with Backside Power Rail and Backside Self-Aligned Via simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18439831. SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRONIC APPARATUS simplified abstract (CANON KABUSHIKI KAISHA)
- 18439859. METHOD FOR FORMING LONG CHANNEL BACK-SIDE POWER RAIL DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18442104. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18442381. HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18443297. SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR INCLUDING HORIZONTAL GATE STRUCTURE AND VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18443917. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18443994. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444849. SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444918. MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18449848. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18449848. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18449988. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Kabushiki Kaisha Toshiba)
- 18449988. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18450656. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18450656. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18450774. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18450774. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18451819. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18453483. SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18456071. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18456071. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18457907. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18458489. TRANSISTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18459172. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18459172. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18459699. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18460171. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18462728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18462876. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18463124. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18463124. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18463237. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18463237. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18464839. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18467293. SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS simplified abstract (NEXPERIA B.V.)
- 18467961. SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING simplified abstract (Robert Bosch GmbH)
- 18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18472312. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18473412. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18475441. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18476571. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18476776. SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18477290. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18478365. THRESHOLD VOLTAGE TUNING OF NFET VIA IMPLEMENTATION OF AN ALUMINUM-FREE CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18486493. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18487275. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18488741. FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18491802. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18492343. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18493856. SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18494376. METHOD FOR FORMING VIA STRUCTURE WITH LOW RESISTIVITY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18494759. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18495220. FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract (Samsung Electronics Co., Ltd.)
- 18502225. SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES simplified abstract (MEDIATEK Inc.)
- 18502324. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18502352. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18502545. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18504027. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504745. CONTACT PLUGS AND METHODS FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18507905. TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18507957. SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
- 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510370. AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
- 18510506. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510582. SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18510949. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18511604. NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DISJOINED EPITAXIAL SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18511711. EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18513439. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18514974. NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING simplified abstract (Intel Corporation)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18515384. INTEGRATED CIRCUIT INCLUDING BACK-SIDE WIRING AND A METHOD OF DESIGNING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18515908. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516215. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516373. HYBRID CONDUCTIVE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517400. INTEGRATED CIRCUIT FIN STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518004. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18518131. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518162. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518585. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518670. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18518716. METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518729. SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18518797. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519263. INTEGRATED CIRCUITS WITH GATE CUT FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519862. CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18520214. SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520326. SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520996. Source/Drain Metal Contact and Formation Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
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