Category:H01L21/768
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Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L21/00: Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- Subgroup H01L21/768: Processes or apparatus for applying a liquid or other fluent material to semiconductor wafers
This classification involves processes or apparatuses specifically adapted for manufacturing semiconductor devices, focusing on the application of liquids or other fluent materials to semiconductor wafers, crucial in the production of modern electronic components.
Pages in category "H01L21/768"
The following 200 pages are in this category, out of 1,447 total.
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- 17523086. MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING simplified abstract (International Business Machines Corporation)
- 17524107. INTERCONNECTS FORMED USING INTEGRATED DAMASCENE AND SUBTRACTIVE ETCH PROCESSING simplified abstract (International Business Machines Corporation)
- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17530971. SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH simplified abstract (International Business Machines Corporation)
- 17531837. BURIED POWER RAIL AFTER REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 17532310. PARTIAL SUBTRACTIVE SUPERVIA ENABLING HYPER-SCALING simplified abstract (International Business Machines Corporation)
- 17534485. MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) WITH PRESERVED UNDERLYING DIELECTRIC LAYER simplified abstract (International Business Machines Corporation)
- 17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)
- 17542563. SAM FORMULATIONS AND CLEANING TO PROMOTE QUICK DEPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543964. BEOL INTERCONNECT SUBTRACTIVE ETCH SUPER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544136. SUBTRACTIVE LINE WITH DAMASCENE TOP VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544337. Etch Back and Film Profile Shaping of Selective Dielectric Deposition simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545073. BURIED POWER RAIL AT TIGHT CELL-TO-CELL SPACE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17546682. BARRIER LINER FREE INTERFACE FOR METAL VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547669. DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548773. DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551457. MEMORY CELL IN WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551541. DIELECTRIC PLANARIZATION USING A METAL OVERBURDEN WITH ETCH-STOP LAYERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551675. LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551998. VIA ALIGNMENT IN SINGLE DAMASCENE STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17576007. INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17577707. Semiconductor Devices with a Nitrided Capping Layer simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17589575. METHOD OF OVERLAY MEASUREMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17592629. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17643202. LINER-LESS VIA CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643395. ADVANCED METAL INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643408. ACCURATE METAL LINE AND VIA HEIGHT CONTROL FOR TOP VIA PROCESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643434. TOP VIA INTERCONNECT STRUCTURE WITH TEXTURE SUPPRESSION LAYERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644448. Method to Produce Buried Nb Lines Surrounded by Ti simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17650758. Heterogenous Integration Scheme for III-V/Si and Si CMOS Integrated Circuits simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651329. Oxygen-Free Protection Layer Formation in Wafer Bonding Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651347. Dual Damascene Structure in Forming Source/Drain Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17651990. Forming Dielectric Film With High Resistance to Tilting simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17656011. SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17662301. SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17674459. Semiconductor Device with Integrated Metal-Insulator-Metal Capacitors simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17676866. INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17679234. INTERCONNECTION STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17680507. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17693027. GUARD RING STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17698476. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING POROUS DIELECTRIC LAYER AND SEMICONDUCTOR DEVICE FABRICATED THEREBY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17699496. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17725300. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17729477. SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17739783. Semiconductor Device and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17741711. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17746737. METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FLUORINE-CATCHING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17781013. METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17806280. VIA CONNECTION TO BACKSIDE POWER DELIVERY NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806570. HIGH ASPECT RATIO BURIED POWER RAIL METALLIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808316. INTERCONNECT WITH TWO-DIMENSIONAL FREE ZERO LINE END ENCLOSURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809030. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17812005. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17812141. MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17815088. Semiconductor Package and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17815359. METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROELECTONIC DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17819482. POWER VIAS FOR BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17819538. ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17822712. STAIRCASE FORMATION IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17823472. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17832488. INTERCONNECT STRUCTURES IN INTEGRATED CIRCUIT CHIPS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17834940. SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17835861. PACKAGE COMPRISING A SUBSTRATE WITH A BRIDGE CONFIGURED FOR A BACK SIDE POWER DISTRIBUTION NETWORK simplified abstract (QUALCOMM Incorporated)
- 17835863. INTERCONNECT VIA METAL-INSULATOR-METAL (MIM) FUSE FOR INTEGRATED CIRCUITRY simplified abstract (Intel Corporation)
- 17835924. GRAPHENE-METAL HYBRID INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836781. SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837052. SEMICONDUCTOR STRUCTURE HAVING TAPERED BIT LINE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17837434. SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837664. GRAPHENE-CLAD METAL INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17839127. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17839447. SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17847863. METHOD FOR FORMING A CONTACT PLUG WITH IMPROVED CONTACT METAL SEALING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849345. INTERCONNECT STRUCTURE HAVING DIFFERENT DIMENSIONS FOR CONNECTED CIRCUIT BLOCKS IN INTEGRATED CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 17849930. MIM CAPACITOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851170. SEMICONDUCTOR CHIP AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17851999. MULTI-PATHWAY ROUTING VIA THROUGH HOLE simplified abstract (Intel Corporation)
- 17852028. SELECTIVE BOTTOMLESS GRAPHENE LINED INTERCONNECTS simplified abstract (Intel Corporation)
- 17864716. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17866917. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17875625. SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876036. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877350. INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877387. INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17879049. SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884468. SEMICONDUCTOR DEVICE INTERCONNECTS HAVING CONDUCTIVE ANNULUS-STABILIZED THROUGH-SILICON VIAS simplified abstract (Micron Technology, Inc.)
- 17884817. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17885025. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17893718. FOLDED STAIRCASE VIA ROUTING FOR MEMORY simplified abstract (Micron Technology, Inc.)
- 17894102. SPLIT VIA STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGING simplified abstract (Micron Technology, Inc.)
- 17895286. Conductive Via With Improved Gap Filling Performance simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896278. Barrier-Less Jumper Structure for Line-to-Line Connections simplified abstract (International Business Machines Corporation)
- 17896919. STAIRCASE FORMATION IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17897876. SKIP VIA WITH LOCALIZED SPACER simplified abstract (International Business Machines Corporation)
- 17898107. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17900151. LOW RESISTANCE INTERCONNECT FEATURES AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17930656. MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17930801. FULL WAFER DEVICE WITH BACK SIDE PASSIVE ELECTRONIC COMPONENTS simplified abstract (Intel Corporation)
- 17930825. FULL WAFER DEVICE WITH FRONT SIDE PASSIVE ELECTRONIC COMPONENTS simplified abstract (Intel Corporation)
- 17931145. A SINGLE BACKSIDE POWER PLANE FOR IMPROVED POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931767. INTEGRATED CIRCUIT CHIP WITH BACKSIDE POWER DELIVERY AND MULTIPLE TYPES OF BACKSIDE TO FRONTSIDE VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932500. PORT LANDING-FREE LOW-SKEW SIGNAL DISTRIBUTION WITH BACKSIDE METALLIZATION AND BURIED RAIL simplified abstract (QUALCOMM Incorporated)
- 17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation)
- 17932887. SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING simplified abstract (SanDisk Technologies LLC)
- 17932907. SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING simplified abstract (SanDisk Technologies LLC)
- 17933000. INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER simplified abstract (Intel Corporation)
- 17933187. SELF-ALIGNED BACKSIDE CONTACT MODULE FOR 3DIC APPLICATION simplified abstract (QUALCOMM Incorporated)
- 17933683. SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS simplified abstract (QUALCOMM Incorporated)
- 17933874. HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17934195. SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract (International Business Machines Corporation)
- 17935161. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract (Changxin Memory Technologies, Inc.)
- 17937313. POWER VIA WITH REDUCED RESISTANCE simplified abstract (ADVANCED MICRO DEVICES, INC.)
- 17937313. POWER VIA WITH REDUCED RESISTANCE simplified abstract (ATI TECHNOLOGIES ULC)
- 17937360. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17943564. Large Surface VBPR for Robust Alignment in Advanced Technology Nodes simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)
- 17946740. VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 17955803. LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE simplified abstract (International Business Machines Corporation)
- 17955974. Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (International Business Machines Corporation)
- 17956114. SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 17956334. MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER simplified abstract (International Business Machines Corporation)
- 17956775. SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 17957721. INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS simplified abstract (Intel Corporation)
- 17958288. PLUG IN A METAL LAYER simplified abstract (Intel Corporation)
- 17960116. INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 17960277. SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17964583. REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES simplified abstract (NVIDIA Corporation)
- 17966864. SEMICONDUCTOR DEVICE HAVING VIA PROTECTIVE LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17969773. SELF-ALIGNED ZERO TRACK SKIP simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17970872. Ru Liner above a Barrier Layer simplified abstract (Applied Materials, Inc.)
- 17971256. SEMICONDUCTOR DEVICES HAVING AIR SPACER simplified abstract (Samsung Electronics Co., Ltd.)
- 17972892. Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17983520. SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES simplified abstract (Samsung Electronics Co., Ltd.)
- 17985138. MANDREL-PULL-FIRST INTERCONNECT PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17994446. SENSOR PACKAGE WITH LOW ASPECT RATIO THROUGH SILICON VIA simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18047412. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18048877. ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18049301. VIRTUAL POWER SUPPLY THROUGH WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18050219. SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED CONTACT AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18053012. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18054187. METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054194. STACKED FET WITH EXTREMELY SMALL CELL HEIGHT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054348. TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18054637. SEMICONDUCTOR DEVICE HAVING CONTACT PLUG simplified abstract (Micron Technology, Inc.)
- 18054970. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18054991. AIRGAP SPACER FOR POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18056181. INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18059398. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18060168. ISOLATED SUPER VIA TO MIDDLE METAL LINE LEVEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060544. BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18065060. BACKSIDE DIRECT CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 18065120. SUPER VIA WITH SIDEWALL SPACER simplified abstract (International Business Machines Corporation)
- 18065747. SKIP VIA WITH DISCONTINUOUS DIELECTRIC CAP simplified abstract (International Business Machines Corporation)
- 18065965. SELF-ALIGNED BACKSIDE GATE CONTACTS simplified abstract (International Business Machines Corporation)
- 18066487. INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18066620. ENLARGED SHALLOW TRENCH ISOLATION FOR BACKSIDE POWER simplified abstract (International Business Machines Corporation)
- 18066671. STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract (International Business Machines Corporation)
- 18067127. LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18074197. MULTI-PULSE DEPOSITION PROCESSES simplified abstract (Applied Materials, Inc.)
- 18074335. Method to Deposit Metal Cap for Interconnect simplified abstract (Applied Materials, Inc.)
- 18077809. TWO STEP IMPLANT TO IMPROVE LINE EDGE ROUGHNESS AND LINE WIDTH ROUGHNESS simplified abstract (Applied Materials, Inc.)
- 18077812. TWO STEP IMPLANT TO CONTROL TIP-TO-TIP DISTANCE BETWEEN TRENCHES simplified abstract (Applied Materials, Inc.)
- 18078245. ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract (International Business Machines Corporation)
- 18078454. SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract (International Business Machines Corporation)
- 18079440. Interconnects with Sidewall Barrier Layer Divot Fill simplified abstract (International Business Machines Corporation)
- 18080715. MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION simplified abstract (Google LLC)
- 18083075. Method for Gapfill simplified abstract (Applied Materials, Inc.)
- 18083818. FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (International Business Machines Corporation)
- 18089494. DIRECT ELECTROPLATING ON MODIFIED POLYMER-GRAPHENE COMPOSITES simplified abstract (Intel Corporation)
- 18090031. GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18090436. METHODS FOR FORMING SEMICONDUCTOR DEVICES USING MODIFIED PHOTOMASK LAYER simplified abstract (Tokyo Electron Limited)
- 18091022. ENABLING COPPER RECESS FLATTENING THROUGH A DFR PATTERNING PROCESSES simplified abstract (Intel Corporation)
- 18091026. ENABLING COPPER RECESS FLATTENING THROUGH BLOCKED COPPER ETCHING PROCESSES simplified abstract (Intel Corporation)
- 18091188. ELECTRICAL LAYER WITH ROUGHENED SURFACES simplified abstract (Intel Corporation)
- 18091943. EMBEDDED SILICON-BASED DEVICE COMPONENTS IN A THICK CORE SUBSTRATE OF AN INTEGRATED CIRCUIT PACKAGE simplified abstract (NVIDIA Corporation)
- 18092081. CHIP PACKAGE STRUCTURES, MANUFACTURING METHODS THEREOF AND ELECTRONIC DEVICES simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18093713. VIA STRUCTURE WITHOUT LINER INTERFACE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18093900. SEMICONDUCTOR DEVICE WITH POLYMER LINER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18094507. SEMICONDUCTOR DEVICE STRUCTURE WITH LINER LAYER HAVING TAPERED SIDEWALL AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18097265. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097418. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18099405. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18103201. INTEGRATION SCHEME FOR FABRICATING HIGH PRECISION, LOW CAPACITOR WITH UNLANDED VIA simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18105945. REDISTRIBUTION SUBSTRATE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18109365. ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION simplified abstract (Applied Materials, Inc.)
- 18112564. Layered Substrate with Ruthenium Layer and Method for Producing simplified abstract (Applied Materials, Inc.)
- 18112853. CARRIER STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18118017. HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES simplified abstract (Applied Materials, Inc.)
- 18119947. SEMICONDUCTOR DEVICE WITH FILLING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18119953. SEMICONDUCTOR DEVICE WITH CAPPING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18122680. FULLY ALIGNED VIA TO SINGLE DAMASCENE UPPER TRENCH simplified abstract (International Business Machines Corporation)
- 18123101. ULTRA-THIN LAYERS BY SELECTIVE PASSIVATION simplified abstract (Applied Materials, Inc.)