18613121. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Misaki Takahashi of Matsumoto-city (JP)
Yuichi Harada of Matsumoto-city (JP)
Kouta Yokoyama of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18613121 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the patent application features a unique configuration where a well region of a first conductivity type is positioned beneath a gate runner portion. This device includes a diode region with first contact portions, a first conductivity type anode region, and a second conductivity type cathode region. The well region makes contact with the diode region in a specific direction, and certain projected distances between different regions on the semiconductor substrate are defined.
Key Features and Innovation:
- Semiconductor device with a well region of a first conductivity type below a gate runner portion
- Diode region comprising first contact portions, a first conductivity type anode region, and a second conductivity type cathode region
- Specific distances between different regions on the semiconductor substrate for optimized performance
Potential Applications: The technology can be applied in:
- Power electronics
- Integrated circuits
- Semiconductor manufacturing
Problems Solved:
- Enhanced performance and efficiency in semiconductor devices
- Improved contact between different regions on the semiconductor substrate
Benefits:
- Increased functionality and reliability of semiconductor devices
- Enhanced overall performance and efficiency
- Optimized contact design for improved electrical connections
Commercial Applications: Potential commercial uses include:
- Consumer electronics
- Automotive industry
- Telecommunications sector
Questions about Semiconductor Device Technology: 1. How does the unique configuration of the semiconductor device improve its performance? 2. What are the specific advantages of the defined distances between different regions on the semiconductor substrate?
Frequently Updated Research: Ongoing research in semiconductor device technology focuses on optimizing contact designs and improving overall performance in various applications.
Original Abstract Submitted
Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.
