18516953. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takamasa Ishikawa of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516953 titled 'SEMICONDUCTOR DEVICE
The abstract describes a patent application for a diode structure that includes trench portions, a drift region, an anode region, and a second conductivity type region on the front surface of the semiconductor substrate.
- The diode structure features a Schottky junction region and an Ohmic junction region.
- The anode region has a higher doping concentration than the base region.
- The second conductivity type region has a higher doping concentration than the anode region.
- The diode structure is designed for improved performance and efficiency in electronic devices.
- This innovation aims to enhance the functionality of diodes in various applications.
Potential Applications: - Power electronics - Semiconductor devices - Integrated circuits
Problems Solved: - Enhancing diode performance - Improving efficiency in electronic devices
Benefits: - Increased functionality - Enhanced performance - Improved efficiency
Commercial Applications: Title: Advanced Diode Technology for Enhanced Electronic Devices This technology can be utilized in power supplies, inverters, and other electronic systems to improve overall performance and efficiency, leading to cost savings and enhanced functionality.
Questions about the technology: 1. How does this diode structure differ from traditional diode designs?
This diode structure incorporates trench portions and specific doping concentrations to enhance performance and efficiency.
2. What are the potential implications of using this technology in power electronics?
By implementing this technology, power electronics can achieve higher efficiency and improved functionality.
Original Abstract Submitted
The diode portion includes: a plurality of trench portions, a drift region of a first conductivity type, an anode region of a second conductivity type provided above the drift region and having a doping concentration higher than that of a base region; and a second conductivity type region provided on the front surface of the semiconductor substrate above the anode region and having a doping concentration higher than that of the anode region, and the diode portion includes a Schottky junction region in which the anode region is provided on the front surface of the semiconductor substrate and an Ohmic junction region in which the anode region and the second conductivity type region are provided on the front surface of the semiconductor substrate.
