18396186. MEMORY REFRESH simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
MEMORY REFRESH
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Hiroki Noguchi of Hsinchu City (TW)
MEMORY REFRESH - A simplified explanation of the abstract
This abstract first appeared for US patent application 18396186 titled 'MEMORY REFRESH
Simplified Explanation: The patent application describes a method for performing refresh operations in a memory device without address rotation, followed by a series of refresh operations with address rotation.
- The method involves repeating the refresh operation without address rotation a predetermined number of times.
- After the predetermined number of repetitions, a refresh operation with address rotation is performed in the cell array of the memory device.
Key Features and Innovation:
- Sequential refresh operations without address rotation.
- Repeating the refresh operation without address rotation for a set number of times.
- Transitioning to refresh operations with address rotation after the predetermined number of repetitions.
Potential Applications: This technology can be applied in various memory devices such as DRAM, SRAM, and flash memory to improve data retention and reliability.
Problems Solved:
- Enhancing the efficiency of refresh operations in memory devices.
- Improving the overall performance and longevity of memory devices.
Benefits:
- Increased data retention and reliability.
- Enhanced performance of memory devices.
- Extended lifespan of memory devices.
Commercial Applications: The technology can be utilized in the manufacturing of consumer electronics, data storage devices, and computer systems to enhance memory performance and reliability, potentially leading to improved user experiences and product longevity.
Questions about Memory Device Refresh Operations: 1. How does the method of performing refresh operations without address rotation benefit memory devices? 2. What are the potential implications of transitioning from refresh operations without address rotation to operations with address rotation in memory devices?
Original Abstract Submitted
Performing refresh operation in a memory device is provided. A refresh operation without address rotation is performed in a cell array of the memory device. Performing the refresh operation without address rotation is repeated for a predetermined number of times. After repeating performing the refresh operation with address rotation for the predetermined number of times, a refresh operation with address rotation is performed in the cell array.
