18403198. REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR simplified abstract (Micron Technology, Inc.)
Contents
REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR
Organization Name
Inventor(s)
Simon J. Lovett of Nampa ID (US)
REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18403198 titled 'REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR
The abstract describes a memory device with a bank of memory cells organized into multiple groups of columns. The device includes controller circuitry to facilitate column repair redundancy swaps for repairing specific groups of memory cells at row address strobe (RAS) time.
- Memory device with a bank of memory cells
- Organized into multiple groups of columns
- Controller circuitry for column repair redundancy swaps
- Repairing specific groups of memory cells at RAS time
Potential Applications: - Data storage systems - Computer memory modules - Embedded systems
Problems Solved: - Efficient memory cell repair - Enhanced reliability of memory devices
Benefits: - Improved data integrity - Extended lifespan of memory devices - Reduced downtime for repairs
Commercial Applications: Title: "Advanced Memory Repair Technology for Enhanced Data Integrity" This technology can be utilized in various industries such as data centers, telecommunications, and consumer electronics for improved memory performance and reliability.
Prior Art: Researchers can explore existing patents related to memory cell repair and redundancy schemes to understand the evolution of this technology.
Frequently Updated Research: Stay updated on advancements in memory repair technologies and industry standards to ensure the implementation of the latest innovations in memory devices.
Questions about Memory Repair Technology: 1. How does this technology compare to traditional memory repair methods? This technology offers more efficient and reliable memory cell repair compared to traditional methods by implementing column repair redundancy swaps. 2. What are the potential scalability challenges of implementing this technology in large-scale memory systems? Large-scale memory systems may face challenges in coordinating repair operations across multiple memory cells, requiring robust controller circuitry for seamless integration.
Original Abstract Submitted
A memory device can include a bank of memory cells. The bank of memory cells can include multiple groups of columns of memory cells. The memory device can include controller circuitry to provide information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups at row address strobe (RAS) time. Upon detection of an error condition in at least one group of columns of memory cells, the controller circuitry can implement the column repair redundancy swap on the corresponding group.
