STACKED FORKSHEET TRANSISTORS

The patent application describes stacked forksheet transistor devices and methods of fabricating them. These devices consist of vertical stacks of semiconductor channels adjacent to a backbone, with one device stacked on top of another.

Stacked forksheet transistor devices
Fabrication methods for these devices
Vertical stacks of semiconductor channels
Integration into an integrated circuit structure
Stacking of multiple transistor devices

Key Features and Innovation

Stacked forksheet transistor devices with vertical semiconductor channels
Integration of multiple transistor devices into an integrated circuit structure
Efficient use of space with stacked configuration
Improved performance and functionality of the devices
Novel fabrication methods for creating these devices

Potential Applications

The technology can be applied in:

Semiconductor industry
Integrated circuit design
Electronics manufacturing
Advanced computing systems
Mobile devices and smartphones

Problems Solved

Space optimization in integrated circuits
Enhanced performance of transistor devices
Efficient use of semiconductor channels
Improved functionality in electronic devices
Advanced fabrication techniques for complex structures

Benefits

Increased efficiency in integrated circuit design
Enhanced performance of electronic devices
Compact and space-saving transistor configurations
Improved functionality and speed in computing systems
Potential for advanced technological applications

Commercial Applications

Title: Stacked Forksheet Transistor Devices in Integrated Circuits This technology can be commercially used in:

Semiconductor manufacturing companies
Electronics industry for advanced devices
Research and development in computing technology
Consumer electronics market for improved products
Potential for licensing and collaboration with tech companies

Questions about Stacked Forksheet Transistor Devices

What are the key advantages of using stacked forksheet transistor devices in integrated circuits?

Stacked forksheet transistor devices offer improved performance, space optimization, and enhanced functionality in electronic devices.

How do the fabrication methods for these devices differ from traditional transistor manufacturing processes?

The fabrication methods for stacked forksheet transistor devices involve creating vertical stacks of semiconductor channels, which is a novel approach compared to traditional transistor fabrication techniques.

Original Abstract Submitted

Embodiments disclosed herein include stacked forksheet transistor devices, and methods of fabricating stacked forksheet transistor devices. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to an edge of the backbone. A second transistor device includes a second vertical stack of semiconductor channels adjacent to the edge of the backbone. The second transistor device is stacked on the first transistor device.

18614290. STACKED FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)

Contents

STACKED FORKSHEET TRANSISTORS

Organization Name

Inventor(s)