18212817. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sug Hyun Sung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18212817 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate with first and second regions, active patterns, gate structures, and source/drain patterns.
- The device includes a first active pattern with a lower pattern and sheet patterns, as well as a second active pattern with a lower pattern and sheet patterns.
- The first gate structure has a gate insulating film and a gate electrode, while the second gate structure has a gate insulating film and a gate electrode with a greater width.
- There are first and second source/drain patterns connected to the lower patterns and sheet patterns of the active patterns.
- The number of sheet patterns in the first active pattern is smaller than the number in the second active pattern.
Potential Applications: - This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in the automotive industry for advanced driver assistance systems and electric vehicles.
Problems Solved: - This technology addresses the need for more efficient and compact semiconductor devices with improved performance.
Benefits: - Improved performance and efficiency in electronic devices. - Enhanced functionality in automotive applications. - Compact design for space-saving in various applications.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronic Performance This technology can be commercialized in the semiconductor industry for the production of high-performance electronic devices. It can also be utilized in the automotive sector for advanced driver assistance systems and electric vehicles.
Questions about the technology: 1. How does the height of the lower patterns in the active patterns affect the overall performance of the semiconductor device? 2. What advantages does the second gate structure with a wider gate electrode provide compared to the first gate structure?
Original Abstract Submitted
A semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gate structure including a first gate insulating film and a first gate electrode; a second gate structure including a second gate insulating film, and a second gate electrode, a width of the second gate electrode being greater than a width of the first gate electrode; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a number of first sheet patterns is smaller than a number of second sheet patterns.
