Samsung electronics co., ltd. (20240237325). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sug Hyun Sung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237325 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with first and second regions, as well as various active patterns, gate structures, and source/drain patterns.
- The device features a first active pattern with a lower pattern and sheet patterns, and a second active pattern with a lower pattern and sheet patterns of identical height.
- It also includes first and second gate structures with gate insulating films and gate electrodes of different widths.
- The first source/drain pattern is on the first lower pattern and connected to the first sheet patterns, while the second source/drain pattern is on the second lower pattern and connected to the second sheet patterns.
- Importantly, the number of first sheet patterns is smaller than the number of second sheet patterns.
Potential Applications: - This semiconductor device could be used in various electronic devices such as smartphones, tablets, and computers. - It may find applications in the automotive industry for advanced driver assistance systems and electric vehicles.
Problems Solved: - This technology addresses the need for more efficient and compact semiconductor devices with improved performance.
Benefits: - Improved performance and efficiency in electronic devices. - Enhanced functionality in a smaller form factor. - Potential cost savings in manufacturing processes.
Commercial Applications: - The technology could be utilized by semiconductor manufacturers to produce more advanced and efficient electronic components for consumer electronics and automotive applications.
Questions about the technology: 1. How does the height of the second lower pattern compare to the height of the first lower pattern? 2. What are the potential implications of having a greater width for the second gate electrode compared to the first gate electrode?
Original Abstract Submitted
a semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gate structure including a first gate insulating film and a first gate electrode; a second gate structure including a second gate insulating film, and a second gate electrode, a width of the second gate electrode being greater than a width of the first gate electrode; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a number of first sheet patterns is smaller than a number of second sheet patterns.
