Samsung electronics co., ltd. (20240234551). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234551 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of three epitaxial layers stacked on a substrate, with a diffusion prevention layer between each layer to prevent impurity diffusion. The epitaxial layers have different conductivity types and contain active patterns for collector, base, and emitter regions.
- The semiconductor device includes first, second, and third epitaxial layers with a diffusion prevention layer to prevent impurity diffusion.
- The epitaxial layers have different conductivity types and contain active patterns for specific regions on the substrate.
- The diffusion prevention layer is crucial for maintaining the integrity of the device and preventing impurity diffusion.
- The device is designed for efficient performance and functionality in semiconductor applications.
- The technology aims to improve the overall performance and reliability of semiconductor devices.
Potential Applications: - This technology can be applied in various semiconductor devices such as transistors and diodes. - It can be used in electronic components for telecommunications, computing, and automotive industries.
Problems Solved: - Prevents impurity diffusion in semiconductor devices. - Enhances the performance and reliability of semiconductor components.
Benefits: - Improved efficiency and functionality of semiconductor devices. - Enhanced performance and reliability in electronic applications.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be commercialized in the semiconductor industry for the development of high-performance electronic components. It has the potential to revolutionize the efficiency and reliability of semiconductor devices in various applications.
Questions about Semiconductor Device Technology: 1. How does the diffusion prevention layer contribute to the performance of the semiconductor device? The diffusion prevention layer plays a crucial role in preventing impurity diffusion, which can impact the functionality and reliability of the device.
2. What are the specific benefits of using different conductivity types in the epitaxial layers? The use of different conductivity types allows for the creation of distinct regions within the device, optimizing its performance for specific functions.
Original Abstract Submitted
a semiconductor device includes first, second, and third epitaxial layers sequentially stacked on a substrate and a first diffusion prevention layer provided in at least one of regions between the first and second epitaxial layers and between the second and third epitaxial layers. the first and third epitaxial layers have a first conductivity type, and the second epitaxial layer has a second conductivity type. the first diffusion prevention layer is configured to prevent an impurity in the second epitaxial layer from being diffused. the first, second, and third epitaxial layers include first, second, and third active patterns, respectively, which are respective provided in upper portions thereof and on collector, base, and emitter regions, respectively, of the substrate.
