Samsung electronics co., ltd. (20240234525). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device Structures
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sung Hwan Kim of Suwon-si (KR)
Heung Seok Ryu of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234525 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a unique structure involving gate structures, source/drain patterns, silicide mask patterns, and contact silicide films.
Key Features and Innovation
- Active pattern with gate structures and source/drain patterns
- Silicide mask pattern on the source/drain pattern
- Source/drain contact connected to the source/drain pattern
- Contact silicide film between the source/drain contact and the source/drain pattern
- Specific height measurements within the device structure
Potential Applications
This technology can be applied in the semiconductor industry for the development of advanced electronic devices with improved performance and efficiency.
Problems Solved
The technology addresses the need for enhanced semiconductor device structures that optimize contact and silicide film placement for better functionality.
Benefits
- Improved performance of semiconductor devices
- Enhanced efficiency in electronic circuits
- Better contact and film placement for optimized functionality
Commercial Applications
- Semiconductor manufacturing industry
- Electronics and consumer electronics sector
- Research and development organizations focusing on semiconductor technology
Prior Art
Readers can explore prior patents related to semiconductor device structures, gate structures, and contact silicide films to gain a deeper understanding of the technology.
Frequently Updated Research
Stay updated on the latest advancements in semiconductor device structures, gate structures, and contact silicide films to remain informed about industry trends and innovations.
Questions about Semiconductor Device Structures
What are the key components of the semiconductor device structure described in the patent application?
The semiconductor device structure includes an active pattern, gate structures, source/drain patterns, silicide mask patterns, and contact silicide films.
How does the height measurement within the device structure contribute to its functionality?
The specific height measurements ensure optimal contact and film placement, enhancing the overall performance and efficiency of the semiconductor device.
Original Abstract Submitted
a semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.
