Samsung electronics co., ltd. (20240234453). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Masato Fujita of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234453 titled 'IMAGE SENSOR
The patent application describes an image sensor with a semiconductor substrate, a photoelectric conversion region, a floating diffusion region, and a vertical transfer gate.
- The image sensor includes a semiconductor substrate with a photoelectric conversion region for capturing light.
- A floating diffusion region is located adjacent to the first surface of the semiconductor substrate.
- A vertical transfer gate on the first surface of the semiconductor substrate transfers photocharges collected in the photoelectric conversion region to the floating diffusion region.
- The vertical transfer gate consists of a first vertical electrode portion and a second vertical electrode portion connected to the photoelectric conversion region.
- The vertical transfer gate extends in a direction perpendicular to the first surface of the semiconductor substrate.
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Efficient transfer of photocharges in image sensors - Improved image quality and sensitivity
Benefits: - Higher quality images - Enhanced sensitivity to light - Improved performance in low-light conditions
Commercial Applications: Title: "Advanced Image Sensors for Enhanced Photography and Surveillance Systems" This technology can be used in the development of high-quality digital cameras, surveillance systems, and medical imaging devices, catering to a wide range of commercial applications.
Questions about the technology: 1. How does the vertical transfer gate improve the performance of the image sensor? 2. What are the potential advancements in image quality with this technology?
Frequently Updated Research: Stay updated on the latest advancements in image sensor technology, particularly in the field of vertical transfer gates and photoelectric conversion regions.
Original Abstract Submitted
an image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. the vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. the vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.
