Samsung electronics co., ltd. (20240234417). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byeol Hae Eom of Suwon-si (KR)
Byung Ha Choi of Suwon-si (KR)
Won Cheol Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234417 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple element separation structures and active patterns, as well as gate electrodes. The first active pattern is wider than the second active pattern in the second direction.
- The semiconductor device includes three element separation structures arranged sequentially along one direction and extending in another direction.
- Two active patterns are present, with the first active pattern located between the first and second element separation structures, and the second active pattern between the second and third element separation structures.
- A first gate electrode extends on the first active pattern in the second direction, while multiple second gate electrodes extend on the second active pattern.
- The width of the first active pattern in the second direction is greater than the width of the second active pattern in the same direction.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Provides a more efficient and compact design for semiconductor devices. - Improves the functionality and performance of electronic devices.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Compact design allows for more components to be integrated into smaller spaces.
Commercial Applications: - This technology can be applied in the production of smartphones, tablets, computers, and other electronic devices to improve their performance and functionality.
Questions about the technology: 1. How does the width difference between the first and second active patterns impact the overall performance of the semiconductor device? 2. What specific electronic applications can benefit the most from this advanced semiconductor technology?
Original Abstract Submitted
a semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.
