US Patent Application 17825678. METHOD FOR FORMING A CONTACT PLUG BY BOTTOM-UP METAL GROWTH simplified abstract

METHOD FOR FORMING A CONTACT PLUG BY BOTTOM-UP METAL GROWTH

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chung-Liang Cheng of Hsinchu (TW)]]

[[Category:Lin-Yu Huang of Hsinchu (TW)]]

[[Category:Li-Zhen Yu of Hsinchu (TW)]]

[[Category:Huang-Lin Chao of Hsinchu (TW)]]

[[Category:Pinyen Lin of Hsinchu (TW)]]

METHOD FOR FORMING A CONTACT PLUG BY BOTTOM-UP METAL GROWTH - A simplified explanation of the abstract

This abstract first appeared for US patent application 17825678 titled 'METHOD FOR FORMING A CONTACT PLUG BY BOTTOM-UP METAL GROWTH

Simplified Explanation

The patent application describes a method for creating a contact plug using bottom-up metal growth. This involves several steps:

• Etching the substrate to create a contact hole that exposes a silicon-containing feature.
• Forming a silicide layer on the exposed silicon-containing feature.
• Depositing a metal seed layer over the silicide layer.
• Depositing a metal contact layer over the metal seed layer to create the contact plug in the contact hole.

This method simplifies the process of creating a contact plug by combining multiple steps into a single step.

Original Abstract Submitted

A method is provided for forming a contact plug by bottom-up metal growth. In one step, a substrate is etched to form a contact hole that exposes a silicon-containing feature in the substrate. In one step, a silicide layer is formed on the silicon-containing feature. In one step, a metal seed layer is formed over the silicide layer. In one step, a metal contact layer is deposited over the metal seed layer to form the contact plug in the contact hole.