US Patent Application 18447810. METHOD FOR IMPROVED POLYSILICON ETCH DIMENSIONAL CONTROL simplified abstract

METHOD FOR IMPROVED POLYSILICON ETCH DIMENSIONAL CONTROL

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yun-Jui He of Hsinchu (TW)]]

[[Category:Chih-Teng Liao of Hsinchu (TW)]]

METHOD FOR IMPROVED POLYSILICON ETCH DIMENSIONAL CONTROL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447810 titled 'METHOD FOR IMPROVED POLYSILICON ETCH DIMENSIONAL CONTROL

Simplified Explanation

The patent application describes methods for manufacturing integrated circuits using a polysilicon etch process.

• The process involves loading a wafer with a polysilicon pattern into a reactor chamber.
• The wafer is then exposed to an activated etchant during the etch process.
• The temperature conditions within the reactor chamber are adjusted during the etch process.
• This adjustment increases the deposition of a polymeric material on the upper surface of the wafer.

Original Abstract Submitted

Provided are methods of manufacturing integrated circuit that include a polysilicon etch process in which the wafer having an etch poly pattern is loaded into a reactor chamber and exposed to an activated etchant and, during the etch process, adjusting the temperature conditions within the reactor chamber to increase polymeric deposition on an upper surface of the wafer.