US Patent Application 18225576. METHOD FOR REDUCING CHARGING OF SEMICONDUCTOR WAFERS simplified abstract

METHOD FOR REDUCING CHARGING OF SEMICONDUCTOR WAFERS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Wei-Lin Chang of Hsinchu (TW)]]

[[Category:Chih-Chien Wang of Hsinchu (TW)]]

[[Category:Chihy-Yuan Cheng of Hsinchu (TW)]]

[[Category:Sz-Fan Chien of Hsinchu (TW)]]

[[Category:Chien-Hung Lin of Hsinchu (TW)]]

[[Category:Chun-Chang Chen of Hsinchu (TW)]]

[[Category:Ching-Sen Kuo of Hsinchu (TW)]]

[[Category:Feng-Jia Shiu of Hsinchu (TW)]]

METHOD FOR REDUCING CHARGING OF SEMICONDUCTOR WAFERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18225576 titled 'METHOD FOR REDUCING CHARGING OF SEMICONDUCTOR WAFERS

Simplified Explanation

The patent application describes a method for reducing electrostatic charges in a semiconductor substrate. Here are the key points:

• The method involves applying a layer of photoresist on the semiconductor substrate.
• The photoresist layer is exposed to radiation, which helps in the subsequent development process.
• A developer solution is used to develop the photoresist layer, removing unwanted portions.
• The semiconductor substrate is then cleaned with a first cleaning liquid to remove the developer solution.
• To further minimize electrostatic charges, a solution called tetramethylammonium hydroxide (TMAH) is applied to the semiconductor substrate.
• The TMAH solution helps in reducing the accumulation of charges in the semiconductor substrate, improving its overall performance.

Original Abstract Submitted

Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.