US Patent Application 18358904. METHOD FOR REMOVING RESISTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR simplified abstract

METHOD FOR REMOVING RESISTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hung-Jui Kuo of Hsinchu City (TW)

Hui-Jung Tsai of Hsinchu (TW)

Tai-Min Chang of Taipei City (TW)

METHOD FOR REMOVING RESISTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358904 titled 'METHOD FOR REMOVING RESISTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR

Simplified Explanation

The patent application describes a method for removing a resist layer from a material layer without damaging the material layer.

• The method involves forming a patterned resist layer on top of a material layer.
• A stripping solution is then applied to the patterned resist layer to dissolve it.
• The stripping solution is specifically designed to dissolve the resist layer without affecting the material layer.
• The stripping solution includes a non-dimethyl sulfoxide solvent and an alkaline compound.
• The non-dimethyl sulfoxide solvent consists of an aprotic solvent and a protic solvent.

Original Abstract Submitted

A method for removing a resist layer including the following steps is provided. A patterned resist layer on a material layer is formed. A stripping solution is applied to the patterned resist layer to dissolve the patterned resist layer without dissolving the material layer, wherein the stripping solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, the non-dimethyl sulfoxide solvent comprises an aprotic solvent and a protic solvent.